Techniques and mechanisms for optically coupling a photonic integrated circuit (PIC) chip to an optical fiber via a planar optical waveguide structure. In an embodiment, a PIC chip comprises integrated circuitry, photonic waveguides, and integrated edge-oriented couplers (IECs) which are coupled to the integrated circuitry via the photonic waveguides. The PIC chip forms respective divergent lens surfaces of the IECs, which are each at a respective terminus of a corresponding one of the photonic waveguides. A planar optical waveguide structure, which is adjacent to the IECs, comprises a core which is optically coupled between the PIC chip and an array of optical fibers. In another embodiment, an edge of the PIC forms a stepped structure, wherein an upper portion of the stepped structure comprises the plurality of coplanar IECs, and a lower portion of the stepped structure extends past the plurality of coplanar IECs.

Techniques and mechanisms for optically coupling a photonic integrated circuit (PIC) chip to an optical fiber via a planar optical waveguide structure. In an embodiment, a PIC chip comprises integrated circuitry, photonic waveguides, and integrated edge-oriented couplers (IECs) which are coupled to the integrated circuitry via the photonic waveguides. The PIC chip forms respective divergent lens surfaces of the IECs, which are each at a respective terminus of a corresponding one of the photonic waveguides. A planar optical waveguide structure, which is adjacent to the IECs, comprises a core which is optically coupled between the PIC chip and an array of optical fibers. In another embodiment, an edge of the PIC forms a stepped structure, wherein an upper portion of the stepped structure comprises the plurality of coplanar IECs, and a lower portion of the stepped structure extends past the plurality of coplanar IECs.

Structures for a coupler and methods of forming a structure for a coupler. A structure for a directional coupler may include a first waveguide core having one or more first airgaps and a second waveguide core including one or more second airgaps. The one or more second airgaps are positioned in the second waveguide core adjacent to the one or more first airgaps in the first waveguide core. A structure for an edge coupler is also provided in which the waveguide core of the edge coupler includes one or more airgaps.

Structures for an optical power splitter and methods of forming a structure for an optical power splitter. The structure includes a first waveguide core having a first arm, a second waveguide core including a second arm, and a third waveguide core having a third arm laterally positioned between the first arm and the second arm. The third arm has a longitudinal axis. The first arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the first arm are laterally adjacent over a first overlap distance. The second arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the second arm are laterally adjacent over a second overlap distance. The first overlap distance is greater than the second overlap distance to provide an overlap offset.

A light detection and ranging system can consists of an optical emitter and optical detector each connected to a controller. An isolator may be coupled to the optical emitter and be constructed of photonic crystals that exhibit a high group index to allow broadband operation with a reduced physical length.

Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

A manufacturing method of an optical waveguide device that allows light to propagate through a core formed within a cladding formed on a substrate, the core having a higher refractive index than the cladding, includes: layering a first cladding-material layer for the cladding and a core-material layer for the core sequentially on the substrate; forming the layered core-material layer into the core having a waveguide shape, and removing a first part of the core, the first part being positioned at a portion where a slit is to be formed, to thereby form a gap in the core; layering a second cladding-material layer for the cladding to cover the first cladding-material layer and the core; and removing, by dry-etching, a second part of the first and second cladding-material layers, the second part being positioned at the portion where the slit is to be formed, to thereby form the slit.

Disclosed herein are waveguide interconnect bridges for integrated circuit (IC) structures, as well as related methods and devices. In some embodiments, a waveguide interconnect bridge may include a waveguide material and one or more wall cavities in the waveguide material. The waveguide interconnect bridge may communicatively couple two dies in an IC package.

The present invention provides an optical coupler comprising: a first optical prong; a second optical prong; an optical waveguide with which the first optical prong and the second optical prong merge; wherein: a distance from an axially outer tip edge of the first optical prong to an axially outer tip edge of the first optical prong is greater than a planar width of the optical waveguide; and the first optical prong and the second optical prong are each tapered from the optical waveguide.

Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.