An optical mode converter includes a silicon substrate and a silicon dioxide film deposited on a top surface of the silicon substrate. A lithium niobate waveguide positioned on the silicon dioxide film having a slab and a rib that both taper in a direction of beam propagation through the optical mode converter. A doped silicon dioxide waveguide is positioned on top of the lithium niobate waveguide and has a slab that tapers in the direction of the optical beam propagation through the optical mode converter. The optical mode converter expands an optical mode of the optical beam propagating through the optical mode converter from a first optical mode size to a second optical mode size.

A multilayer film includes a single-crystal silicon layer, a first layer containing Zr, a second layer containing ZrO.sub.2, and a third layer containing a perovskite oxide having an electrooptic effect. The first layer, the second layer, and the third layer are provided in this order above the single-crystal silicon layer, and the multilayer film is transparent to a wavelength to be used.

A multilayer film includes a single-crystal silicon layer, a first layer containing Zr, a second layer containing ZrO.sub.2, and a third layer containing a perovskite oxide having an electrooptic effect. The first layer, the second layer, and the third layer are provided in this order above the single-crystal silicon layer, and the multilayer film is transparent to a wavelength to be used.

Photonic devices having a quantum well structure that includes a Group III-N material, and a Al.sub.1-xSc.sub.xN cladding layer disposed on the quantum well structure, where 0<x≤0.45, the Al.sub.1-xSc.sub.xN cladding layer having a lower refractive index than the index of refraction of the quantum well structure.

Photonic devices having a quantum well structure that includes a Group III-N material, and a Al.sub.1-xSc.sub.xN cladding layer disposed on the quantum well structure, where 0<x≤0.45, the Al.sub.1-xSc.sub.xN cladding layer having a lower refractive index than the index of refraction of the quantum well structure.

An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.

An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.

Disclosed are a micro-ring modulator and a method for manufacturing a micro-ring modulator. The micro-ring modulator includes at least one straight waveguide (10) and at least one surface plasmon polariton micro-ring resonator (20) coupled to the straight waveguide (10). The straight waveguide (10) is configured for transmitting an optical signal; and the surface plasmon polariton micro-ring resonator (20) is configured for modulating an intensity of an optical signal with a wavelength corresponding to the surface plasmon polariton micro-ring resonator (20).

A method and system of determining a z-distance between an optical fiber and a substrate are presented. The method can include, for instance: obtaining an image that includes an end of the optical fiber and a reflection of the end of the optical fiber from a surface of the substrate, and processing the image to determine a z-distance along a z-axis between the end of the optical fiber and the substrate.

A planar lightwave circuit structure based on a printed circuit board and its manufacturing method are provided. The manufacturing method includes: S1, preparing the printed circuit board; S2, adhering the lower cladding layer to one side of the printed circuit board, and then annealing process carried out; S3, jetting a lightwave circuit material on an upper surface of the lower cladding layer in a predetermined route through an electrohydrodynamic jet printing device to form lightwave circuit lines to be cured, the lightwave circuit material being a slurry containing silver ions and an ultraviolet (UV) curing agent; S4, curing the lightwave circuit lines through irradiation of UV light, the UV light irradiating onto the lightwave circuit lines through a lens assembly with slits; and S5, depositing an upper cladding layer on the lower cladding layer and the lightwave circuit lines, and then solidifying treatment carried out.