The semiconductor structure includes a die, a dielectric layer surrounding the die, a photoelectric device disposed adjacent to the die and surrounded by the dielectric layer, a first opening extending through the redistribution layer and configured to receive a light-conducting member, and a metallic shield extending at least partially through the redistribution layer and surrounding the first opening. A method for forming a semiconductor structure includes receiving a die; forming a dielectric layer to surround the die; and disposing a photoelectric device surrounded by the dielectric layer; forming a redistribution layer over the die, the dielectric layer and the photoelectric device; and removing a portion of the redistribution layer to form a first opening over the photoelectric device. A metallic shield extending at least partially through the redistribution layer and surrounding the first opening is formed during the formation of the redistribution layer.

A transimpedance amplifier and photodiode that has a bias voltage node established at a bias voltage and a ground node/plane that connects, over a short distance as compared to the prior art, to a photodiode and a transimpedance amplifier. The photodiode is in a substrate and configured to receive and convert an optical signal to an electrical current. The photodiode has an anode terminal and a cathode terminal which is connected to the bias voltage node. One or more capacitors in or on the substrate and connected between the bias node and the ground node. The transimpedance amplifier has an input connected to the anode terminal of the photodiode and an output that presents a voltage representing the optical signal to an output path. The transimpedance amplifier and the photodiode are both electrically connected in a flip chip configuration and the ground plane creates a coplanar waveguide.

A connector includes a heat spreader. The heat spreader is configured to direct heat from ports to a thermal plate that is spaced apart from the connector. A plurality of connectors can be supported and a heat spreader can be associated with each connector. One or more thermal plates can be thermally coupled to the corresponding heat spreader(s) so as to direct thermal energy away from each connector. Cold blocks can be used to thermally couple the heat spreader to the corresponding thermal plates.

Various embodiments of a photodetector having a reflector are described. The photodetector includes a waveguide layer disposed on top of a substrate, an avalanche multiplication detection region disposed on top of the waveguide layer, and a reflector disposed adjacent to a rear surface of the waveguide layer. The waveguide layer includes a narrower input section and a wider detection section concatenated with the input section. The waveguide layer may also include a tapering section having a changing width that follows the detection section. The reflector may be a one-dimensional photonic crystal, a two-dimensional photonic crystal, or a bulk material. A careful design of the reflector and the waveguide layer of the photodetector is helpful in achieving a high responsivity and a high operation speed at the same time.

A converter module comprises a housing; a fiber optic connector integrated with the housing, wherein the fiber optic connector is configured to mount directly to a fiber optic connector in a service terminal; a single electrical connector configured to couple to a metallic medium; and an optical-to-electrical (O/E) converter located in the housing and coupled to the fiber optic connector and the single electrical connector, the O/E converter configured to convert between optical frames communicated via the fiber optic connector and electrical signals communicated via the metallic medium.

A semiconductor device includes a holding member including a component placement part; a back plate; a substrate including a mounting surface facing the holding member, and a back surface facing the back plate; a plurality of mounting pads located at the mounting surface; a package component including a terminal placement surface facing the mounting surface; and a plurality of package terminals located at the terminal placement surface. The substrate is held between the holding member and the back plate. The package component is located in the component placement part, and held between the holding member and the substrate. The package terminals are in direct contact with the mounting pads.

An excitation light irradiation device includes a substrate having a color center. The color center is excited by an excitation light incident to the substrate. The substrate includes first and second reflection surfaces facing each other, and first and second end surfaces facing each other. When the excitation light enters into the substrate, the incident excitation light travels from the first end surface to the second end surfaces while repeatedly reflecting between the first and second reflection surfaces. The second end surface is inclined. The second end surface reflects the incident excitation light so as to cause the incident excitation light to be emitted from one of the first and second reflection surfaces.

Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

An optical construction (100) includes a lightguide (102), a transmissive reflector (112), and an optical sensor (114). The lightguide (102) includes a first major surface (104) and a second major surface (106) opposite to the first major surface (104). The first major surface (104) includes a first portion (108) and an adjoining second portion (110). The transmissive reflector (112) is disposed adjacent to the first major surface (104) of the lightguide (102). The optical sensor (114) is disposed adjacent to the transmissive reflector (112) opposite to the lightguide (102). The optical sensor (114) is aligned with the first portion (108) of the first major surface (104) of the lightguide (102), such that the optical sensor (114) receives at least a portion of light passing through the first portion (108) of the first major surface (104) and transmitted by the transmissive reflector (112). The optical construction (100) further includes an enclosed gap (116) disposed between the first portion (108) of the first major surface (104) of the lightguide (102) and the transmissive reflector (112).

Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.