Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

A structure adapted to optical coupled to an optical fiber includes a photoelectric integrated circuit die, an electric integrated circuit die, a waveguide die and an insulating encapsulant. The electric integrated circuit die is over and electrically connected to the photoelectric integrated circuit die. The waveguide die is over and optically coupled to the photoelectric integrated circuit die, wherein the waveguide die includes a plurality of semiconductor pillar portions extending from the optical fiber to the photoelectric integrated circuit die. The insulating encapsulant laterally encapsulates the electric integrated circuit die and the waveguide die.

A semiconductor optical device includes a first facet bounding a first end of the semiconductor optical device. The semiconductor optical device further includes a waveguide having a first end proximate the first facet, the first end of the waveguide being tapered towards the first facet. The first facet has a curvature to increase modal reflectivity at a first interface at which the first end of the waveguide meets the first facet.

A photonics transceiver is described herein, wherein the photonics transceiver exhibits improved areal bandwidth density and improved energy per bit consumption relative to conventional photonics transceivers. The photonics transceiver achieves an areal bandwidth density of at least 5 Tbps/mm.sup.2 with an energy consumption of less than 500 fJ/bit (sum of energy consumed for both a transmitted bit and a received bit). The photonics transceiver is a multi-chip module, where chips in the multi-chip module are tightly integrated with one another. The multi-chip module includes light source, photodetector, photonics, and control/logic chips. The photonics chip includes transparent conducting oxide integrated optical modulators and multiplexers and demultiplexers based on MEMS-tunable optical ring resonators.

An optical module includes: photoelectric elements including first terminal groups; an integrated circuit including second terminal groups and ground terminals; a carrier substrate; a housing; and a common ground pad. Further, the carrier substrate is fixed to one surface of the housing, the carrier substrate includes signal wiring parts and a ground wiring part, the ground wiring part includes terminal pattern parts, a common pattern part, and a coupling part, each of the terminal pattern parts being disposed between the corresponding signal wiring parts and electrically connected with one of the ground terminals, the common pattern part being disposed on a side where the common ground pad is provided on the carrier substrate, the coupling part electrically connecting each terminal pattern part and the common pattern part, and the ground terminals of the integrated circuit are electrically connected with the common ground pad through the ground wiring part.

An optical device includes: lasers output first light from a front-end side and output second light from a rear-end side; an optical multiplexer circuit multiplex respective rays of the first light, to thereby send out output light; waveguides guide respective rays of the second light toward one end face of the optical device; and light detectors receive respective rays of reflected light that are due to reflection of the respective rays of the second light after being guided by the waveguides, on the one end face or on respective inclined end faces in concave portions formed on that one end face. The light detector is located between the rear-end side of the laser and the one end face or the inclined end face, and the second light is outputted diagonally relative to a perpendicular line with respect to the one end face or the inclined end face.

A delivery system extends from a laser radiation source for connecting to a medical device that utilizes the laser radiation for medical treatment. The delivery system comprises an optical fiber connecting to a male launch connecter. The male launch connector having a body portion with the optical fiber fixed or constrained therein and the optical fiber terminating at a male ferrule with a forward directed fiber facet, the male ferrule may be compliantly supported and positioned by elastomeric material positioned between the male ferrule and the body portion. The launch connector engages a receiving connector first with mechanical connection portions and then more finely aligning optical connection portions by the male ferrule self aligning in a female ferrule with cooperating tapered surfaces. The male portion may fully seat in the female portion with cooperating cylindrical surfaces.

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

A TORminator module is disposed with a switch linecard of a rack. The TORminator module receives downlink electrical data signals from a rack switch. The TORminator module translates the downlink electrical data signals into downlink optical data signals. The TORminator module transmits multiple subsets of the downlink optical data signals through optical fibers to respective SmartDistributor modules disposed in respective racks. Each SmartDistributor module receives multiple downlink optical data signals through a single optical fiber from the TORminator module. The SmartDistributor module demultiplexes the multiple downlink optical data signals and distributes them to respective servers. The SmartDistributor module receives multiple uplink optical data signals from multiple servers and multiplexes them onto a single optical fiber for transmission to the TORminator module. The TORminator module coverts the multiple uplink optical data signals to multiple uplink electrical data signals, and transmits the multiple uplink electrical data signals to the rack switch.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.