An optical projection system includes a source of collimated light, a first microelectromechanical system mirror positioned to receive collimated light from the source, and an optical relay system positioned to receive collimated light from the first microelectromechanical system mirror. The optical relay system includes a single-pass relay having a first component, a second component, and a third component. The optical projection system also includes a second microelectromechanical system mirror positioned to receive collimated light from the optical relay system and an eyepiece positioned to receive light reflected from the second microelectromechanical system mirror.

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask in a projection exposure apparatus includes using an anamorphic projection lens

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture stop of which the aspect ratio in the direction of the two object field coordinates differs from 1. This results in an imaging optical unit which can be used for the examination of lithography masks that are designed for projection exposure with an anamorphic projection optical unit.

In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

A mirror (M) of a projection exposure apparatus for microlithography configured for structured exposure of a light-sensitive material and a method for producing a mirror (M). The mirror (M) has a substrate body (B), a first mirror surface (S) and a second mirror surface (S). The first mirror surface (S) is formed on a first side (VS) of the substrate body (B). The second mirror surface (S) is formed on a second side (RS) of the substrate body (B), the second side being different from the first side of the substrate body (B). The mirror (M) may be embodied, in particular, such that the substrate body (B) is produced from a glass ceramic material.

An infrared microscope including a light source that emits infrared light of which intensity increases and decreases repetitively, a collecting element that collects the infrared light from the light source, an irradiating side objective element that irradiates the sample with infrared light, a collecting side objective element that collects the infrared light transmitted through the sample, a spectroscopic portion that spectrally processes the collected infrared light, a detector of the infrared light; and a signal processing portion that performs lock-in detection to a detection signal by using a reference signal that synchronizes with an intensity of the infrared light to acquire an infrared spectrum of the sample. The light source has a light-emitting surface having a size of 0.1 m or greater and 20 m or less. Light-emitting surface's image is formed on the sample by the collecting element and the irradiating side objective element.

An optical projection system includes a source of collimated light, a first microelectromechanical system mirror positioned to receive collimated light from the source, and an optical relay system positioned to receive collimated light from the first microelectromechanical system mirror. The optical relay system includes a single-pass relay having a first component, a second component, and a third component. The optical projection system also includes a second microelectromechanical system mirror positioned to receive collimated light from the optical relay system and an eyepiece positioned to receive light reflected from the second microelectromechanical system mirror.