A near-eye display system employs a low-amplitude, low-frequency micro-electromechanical system (MEMS) mirror in series with a higher-amplitude, higher-frequency resonant MEMS mirror to rotate at a reduced amplitude and frequency with respect to the resonant MEMS mirror redistribute illumination pulses or pixels at the extents of a sinusoidal angular scan pattern of the resonant MEMS mirror.

An image projector includes a spatial light modulator (SLM) with a two dimensional array of pixel elements controllable to modulate a property of light transmitted or reflected by the pixel elements. An illumination arrangement delivers illumination to the SLM. A collimating arrangement collimates illumination from the SLM to generate a collimated image directed to an exit stop. The illumination arrangement is configured to sequentially illuminate regions of the SLM, each corresponding to a multiple pixel elements. A controller synchronously controls the pixel elements and the illumination arrangement so as to project a collimated image with pixel intensities corresponding to a digital image.

A light module includes an optical element and a base on which the optical element is mounted. The optical element has an optical portion which has an optical surface; an elastic portion which is provided around the optical portion such that an annular region is formed; and a pair of support portions which is provided such that the optical portion is sandwiched in a first direction along the optical surface and in which an elastic force is applied and a distance therebetween is able to be changed in accordance with elastic deformation of the elastic portion. The base has a main surface, and a mounting region in which an opening communicating with the main surface is provided. The support portions are inserted into the opening in a state where an elastic force of the elastic portion is applied.

A high spatial and temporal resolution synthetic aperture phase microscopy (HISTR-SAPM) system and methods are provided for sample imaging and metrology. The HISTR-SAPM system includes a sample-illumination path along which a first illumination beam propagates and a reference-beam path along which a second illumination beam propagates. A first digital micromirror device (DMD), a second DMD, and a first scanning objective lens are disposed in the sample-illumination path and at a first side adjacent to the sample. A second scanning objective lens passes the sample information to a beam splitter (BS), where the sample illumination beam and the reference-beam are combined to form an interferogram at a final image plane for imaging the sample. A Fourier spatial spectrum analysis and a synthetic aperture are then used to reconstruct a quantitative phase map of the sample with a high resolution and at a high-speed.

Provided is an optical device capable of suppressing variations in the range for scanning light. This optical device comprises: a light source that emits a laser beam; a MEMS mirror that scans the laser beam toward a predetermined range; and a diffraction grating that guides the laser beam to the MEMS mirror by guiding the laser beam in a direction corresponding to the wavelength thereof. The optical device also comprises an MEMS control unit that performs control such that, by employing a change in the optical path of the laser beam caused through the diffraction grating by a change in the wavelength of the laser beam, variations in the scanning range of the laser beam by the MEMS mirror are suppressed.

A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

A multiplexed light field projector device and a multiplexed light field display to output a light field image is described. The projector has a projector base with a projection optical system configured to output light rays to form a projected image, a collimating optical system configured for collimation of the projected image light rays to form a second projected image, which is directed to a display optical system to produce a light field image. Light field projector devices or alternative projector devices may be used individually or in combination with one or more other projectors which can be arranged to form a multiplexed direct projection light field display. The arrangement of projector devices may have an individual or shared display optical system.

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces.

An aperture structure for a substrate for an optical device includes an optical cavity layer, a light absorbing layer, and a blocking layer. The optical cavity layer includes a dielectric material and is characterized by a refractive index of about 1.4 or greater, as measured at a wavelength of 550 nm. The light absorbing layer includes a metal or a metal alloy and is characterized by an extinction coefficient k of at least 1, as measured at a wavelength of 550 nm. The blocking layer includes a metal or a metal alloy and is characterized by an optical density of at least 3 at each wavelength of light in the range from 400 nm to 700 nm. The aperture structure includes a reflectance of less than 5% at each wavelength of light in the range from 400 nm to 700 nm, as measured through the substrate.

An optoelectronic component includes an optical transducer made of III-V semiconductor material and an optical scanning microelectromechanical system comprising a mirror. The optical transducer and the optical scanning microelectromechanical system are produced on a common wafer comprising at least a first layer made of silicon or silicon nitride with a thickness of less than one micron and wherein at least the mirror and its holding springs are produced. In a first variant, the mobile parts of the optical scanning microelectromechanical system are produced in various layers of silicon. In a second variant, the mobile parts of the optical scanning microelectromechanical system are produced in the layer of III-V semiconductor material.