A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

Structures for a thermo-optic phase shifter and methods of forming a thermo-optic phase shifter. The structure comprises a semiconductor substrate, and a heater including a first resistive heating element, a second resistive heating element, and a slab layer connecting the first resistive heating element to the second resistive heating element. The first resistive heating element and the second resistive heating element have a first thickness, and the slab layer has a second thickness that is less than the first thickness. The structure further comprises a waveguide core including a portion that is laterally positioned between the first resistive heating element and the second resistive heating element. The slab layer of the heater is disposed between the portion of the waveguide core and the semiconductor substrate.

A system-in-package includes: a photonic integrated circuit (PIC) including an active photonic component; and an electronic integrated circuit (EIC) stacked on the PIC, the EIC including: an electrical component electrically connected to a landing pad, and a copper pillar embedded in the landing pad and protruding from the landing pad that connects with the active photonic component such that the electrical component is electrically connected to the active photonic component. The landing pad has a larger surface area than a cross sectional area of the copper pillar, and wherein, when viewed from the EIC towards the PIC, the active photonic component on the PIC is offset from the landing pad of the EIC, wherein the offset is sufficient to keep a parasitic capacitance between the landing pad and the active photonic component within a pre-determined threshold level of tolerance.

A semiconductor chip includes: a photonic integrated circuit (PIC) comprising an active component electrically connected to a first landing pad at a surface of the PIC, wherein the first landing pad is configured to receive a copper pillar, which, when installed, provides at least a portion of a first electrical interconnect between the active photonic component and a second integrated circuit to be stacked on the surface of the PIC, and wherein, when viewed from above the PIC towards the PIC, a center of the active photonic component on the PIC is offset from a nearest edge of the first landing pad by about a distance less than 10 m.

A method includes: providing an active photonic component of a photonic integrated circuit (PIC); attaching two electrodes to the active photonic component of the PIC; providing a first landing pad on a front surface of the PIC, wherein, when viewed from a direction perpendicular to the front surface of the PIC, a center of the active photonic component of the PIC is offset from a nearest edge of the first landing pad by about a distance less than 10 m; and electrically connecting the first landing pad to one of the two electrodes.

A system-in-package includes: a photonic integrated circuit (PIC) including an active photonic component; and an electronic integrated circuit (EIC) stacked on the PIC, the EIC including: an electrical component electrically connected to a landing pad, and a copper pillar embedded in the landing pad and protruding from the landing pad that connects with the active photonic component such that the electrical component is electrically connected to the active photonic component. The landing pad has a larger surface area than a cross sectional area of the copper pillar, and wherein, when viewed from the EIC towards the PIC, the active photonic component on the PIC is offset from the landing pad of the EIC, wherein the offset is sufficient to keep a parasitic capacitance between the landing pad and the active photonic component within a pre-determined threshold level of tolerance.

A method and apparatus for modulation of an optical signal are provided. The optical signal is transmitted by an optical waveguide that has disposed at least partially thereon two stack assemblies that include a gap above and longitudinally aligned with the optical waveguide. Each stack assembly includes a bottom anode layer (e.g., Al), an insulating coating disposed on the bottom anode layer (e.g., Al.sub.2O.sub.3), at least one inorganic modulation material (e.g., ITO) layers disposed on the insulating coating, and a cathode layer disposed on top of the at least one inorganic modulation material layers. The optical signal transmitted by the optical waveguide can be modulated in accordance with an electrical signal (e.g., voltage) applied to both stack assemblies. Tapered portions are provided for coupling the optical signal from the waveguide to the stack assemblies, and from the stack assemblies to the waveguide.

A modulator including multiple modulation units each including multiple ring modulators and an output waveguide configured to multiplex beams that have passed through the ring modulators included in the modulation units and output a multiplexed beam. The modulation units each include a sorting waveguide that guides a beam inputted from outside to the ring modulators. All the ring modulators included in the modulation units have resonance frequencies adjusted to differ from each other. A modulator, modulation system, and transmission module for increasing the data communication capacity without having to increase the number of light sources can be provided.