A phase modulation module and an electro-optic modulator are provided. The phase modulation module has an input end face and an output end face and the phase modulation module comprises a substrate, an isolation layer, a waveguide layer, and an electrode layer which are arranged in sequence. The electrode layer includes a plurality of electrodes which are arranged at intervals and configured to form a modulating electric field region. The waveguide layer comprises a plate layer, a first ridge layer, and a second ridge layer which are arranged in sequence in a direction away from the substrate.

An optical transmitter including an optical waveguide and N microring resonators (MRRs) coupled to the optical waveguide is provided. In such an optical transmitter each of the N MRRs having a different coupling coefficient determining the amount of coupling to the optical waveguide, wherein N>1. In some embodiments, each of the N MRRs has a different spacing distance from the optical waveguide, wherein the coupling coefficient for each MRR is dependent on the spacing. In some embodiments the optical transmitter further includes an input for receiving N drive signals from a controller, each drive signal shifting the resonant wavelength of the corresponding MRR to control the optical power coupled in the corresponding MRR from the optical waveguide in which an optical signal propagates.

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3V.Math.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

Structures for a thermo-optic phase shifter and methods of forming a thermo-optic phase shifter. The structure comprises a semiconductor substrate, and a heater including a first resistive heating element, a second resistive heating element, and a slab layer connecting the first resistive heating element to the second resistive heating element. The first resistive heating element and the second resistive heating element have a first thickness, and the slab layer has a second thickness that is less than the first thickness. The structure further comprises a waveguide core including a portion that is laterally positioned between the first resistive heating element and the second resistive heating element. The slab layer of the heater is disposed between the portion of the waveguide core and the semiconductor substrate.

A method includes forming a layer made of a first insulating material on a first layer made of a second insulating material that covers a support, defining a waveguide made of the first material in the layer of the first material, covering the waveguide made of the first material with a second layer of the second material, planarizing an upper surface of the second layer of the second material, and forming a single-crystal silicon layer over the second layer.

An optical ring resonator structure with a backside recess is provided at a device. The device includes: a substrate having a device-side and a backside opposite the device-side; an optical ring resonator located on the device-side of the substrate; a heater having a shape complementary to the optical ring resonator, the heater positioned to heat the optical ring resonator; and one or more metal traces that connect at least to the heater, the metal traces configured to provide power to the heater and extending outward from the heater. The device further includes a recess on the backside of the substrate, the recess centered on the optical ring resonator, and having a diameter larger than both respective outer diameters of the optical ring resonator and the heater, the recess further extending laterally into a region of the one or more metal traces.

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3V.Math.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

An ultraviolet transmitting glass containing, in mole percentage based on oxides, 55 to 80% of SiO.sub.2, 12 to 27% of B.sub.2O.sub.3, 4 to 20% of R20 (where R represents an alkali metal selected from a group consisting of Li, Na, and K) in total, 0 to 3.5% of Al.sub.2O.sub.3, 0 to 5% of RO (where R represents an alkaline earth metal selected from a group consisting of Mg, Ca, Sr, and Ba) in total, 0 to 5% of ZnO, and 0 to 10% of ZrO.sub.2, wherein transmittance at a wavelength of 254 nm in terms of spectral transmittance at a plate thickness of 0.5 mm is 70% or more. The glass with high ultraviolet light transmittance, in particular, high deep ultraviolet light transmittance is provided.

An optical device has five elements fabricated on one substrate. The first has an active waveguide structure supporting a first mode. The second has a passive waveguide supporting a second mode. The third has a passive waveguide supporting a third mode. The fourth element has a heatsink thermally coupled to the first element. The fifth element, at least partly butt-coupled to the first element, has an intermediate waveguide supporting an intermediate mode.

The effective mode area of the third mode is larger than that of the second mode;

A tapered waveguide structure in the second or fifth element facilitates efficient adiabatic transformation between the second mode and the intermediate mode.

A tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second mode and the third mode.

No adiabatic transformation occurs between the intermediate mode and the first mode.