Embodiments herein relate to techniques for baseline wander (BLW) compensation. The technique may include identifying a data stream that is to be modulated by a ring modulator of an optical transmitter, wherein the data stream has a frequency operable to cause thermal-based BLW of an optical output of the optical transmitter. The technique may further include adjusting a time-varying direct current (DC) voltage bias of the ring modulator based on the frequency of the data stream. Other embodiments may be described and/or claimed.

Aspects of the present disclosure provide an optical modulator with linearly distributed active circuitry coupled to a signal electrode to compensate for loss or attenuation of a high frequency modulation signal in the signal electrode. In one embodiment, negative resistance cells are attached to the signal electrode at various points, and have tunable negative resistances to compensate for the loss. In another embodiment, a segmented bias electrode is provided along the length of the optical waveguide in the optical modulator. Each segmented bias electrode may have a pre-determined bias voltage that can reduce impedance mismatches along the length of the signal electrode to reduce echoes and ripples in the modulation signal.

In one embodiment, an electro-absorption modulator receives an optical light from an optical light source and outputs a modulated optical signal. The electro-absorption modulator includes a bias voltage used to set a predetermined modulation performance and an output power of the electro-absorption modulator. A controller measures a photocurrent generated by the electro-absorption modulator and uses the photocurrent as a reference to automatically control the bias voltage of the electro-absorption modulator to maintain the predetermined modulation performance and the output power of the electro-absorption modulator when a detuning change occurs between the electro-absorption modulator and the optical light source throughout the lifetime of transmitters based on an EML device.

According to various embodiments, an all-optical thresholder device is disclosed. The all-optical thresholder device includes a Mach-Zehnder interferometer (MZI) coupled to a Mach-Zehnder coupler (MZC). The MZI includes at least one microring resonator (MRR) and a first tunable element, where the MRR further includes a second tunable element. The MZC includes a third tunable element. The first, second, and third tunable elements are configured to control biases of the all-optical thresholder device to achieve a desired power transfer function.

Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.

An optical tweezer phonon laser system and method for modulating mechanical vibrations of an optically levitated mechanical oscillator to produce coherence is disclosed. A feedback loop is configured to simultaneously supply an electro-optic modulator with an amplification signal and a cooling signal representing an amplification force linear in the mechanical oscillator momentum and a cooling force nonlinear in the mechanical oscillator variable position and linear in the momentum, respectively controlling the intensity of a trap beam levitating the mechanical oscillator.

A liquid crystal display includes: a gate line connected to a gate electrode; a semiconductor layer disposed on the gate line and including silicon; an ohmic contact layer disposed on the semiconductor layer; and a data conductor disposed on the ohmic contact layer. The semiconductor layer includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The data conductor includes a data line transmitting a data signal, a source electrode corresponding to the source region, and a drain electrode corresponding to the drain region. A channel step of the semiconductor layer is a height difference between an upper surface in the source region or the drain region and an upper surface in the channel region. The upper surface in the source region or the drain region has a maximum height of the semiconductor layer.

An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

Disclosed are a temperature control method of an optical modulator and an apparatus therefore. The temperature control apparatus of an optical modulator according to an exemplary embodiment of the present disclosure is to provide a temperature control method of an optical modulator which performs a calibration mode to select a heater control voltage with a maximum optical modulation amplitude (OMA) while adjusting a heater control voltage which drives a heater of the optical modulator, stores a reference temperature measurement code based on a measured temperature value of the optical modulator while driving the heater at a selected heater control voltage, and performs a lock mode which controls a temperature of the optical modulator by changing the heater control voltage using the reference temperature measurement code after stopping the optical modulation amplitude detecting operation and an apparatus therefor.