An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

In some embodiments, the present disclosure relates to a modulator device that includes an input terminal configured to receive impingent light. A first waveguide has a first output region and a first input region that is coupled to the input terminal. A second waveguide is optically coupled to the first waveguide and has second input region and a second output region that is coupled to the input terminal. An output terminal coupled to the first output region of the first waveguide and the second output region of the second waveguide is configured to provide outgoing light that is modulated. A heater structure is configured to provide heat to the first waveguide to induce a temperature difference between the first and second waveguides. A gas-filled isolation structure is proximate to the heater structure and is configured to thermally isolate the second waveguide from the heat provided to the first waveguide.

An optical modulator includes a dielectric layer and a waveguide. The waveguide is disposed on the dielectric layer. The waveguide includes an electrical coupling portion, a slab portion, and an optical coupling portion. The slab portion is directly in contact with both of the electrical coupling portion and the optical coupling portion. The slab portion has a first sub-portion and a second sub-portion connected to the first sub-portion. A top surface of the electrical coupling portion, a top surface of the first sub-portion, and a top surface of the second sub-portion are located at different level heights.

An optical modulator includes a semiconductor substrate and an optical waveguide portion disposed on the semiconductor substrate. A signal contact that extends alongside the optical waveguide portion is disposed on the semiconductor substrate. A first ground line is disposed on the semiconductor substrate spaced away from the signal contact by a first spacing. A second ground line is disposed on the semiconductor substrate spaced away from the signal contact by a second spacing opposite the first ground line. The first spacing is different from the second spacing.

The optical modulator includes a lower cladding layer formed on a substrate, a core formed on the lower cladding layer, and an upper cladding layer formed on the core. The core is made of an InP-based semiconductor having a bandgap corresponding to a desired wavelength. Refractive indexes of the lower cladding layer and upper cladding layer are equal to or less than a refractive index of InP.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

A photonic system includes a light source and a photonic structure. The photonic structure includes an optical transmission structure and an optical absorption structure. The optical transmission structure is configured to transmit light associated with a first wavelength range. The optical absorption structure is configured to absorb light associated with a second wavelength range. The light source is configured to provide a light beam with a wavelength that is within the second wavelength range to the optical absorption structure. The optical absorption structure is configured to generate and provide heat to the optical transmission structure when the light beam falls incident on the optical absorption structure.

Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

A photonic neural network device may include a planar waveguide; a layer having a changeable refractive index adjacent to the planar waveguide; and a plurality of electrodes. Each electrode may be electrically coupled to the layer having the changeable refractive index at a corresponding location of the layer having the changeable refractive index. Each electrode may be configured to apply a corresponding, configurable voltage to the corresponding location to affect a refractive index of the corresponding location of the layer having the changeable refractive index to induce an amplitude modulation or a phase modulation of a light waveform propagating through the photonic neural network device to configure a corresponding neuron of the photonic neural network device in order to perform a computation.

An electro-optical includes, in part, a multitude of phase modulators each of which includes, in part, a p-type semiconductor region, an n-type semiconductor region, and a χ.sup.(2) insulating dielectric material disposed between the p-type and n-type semiconductor regions. The electro-optical device may be a phased array in which each phase modulator is associated with a different one of the transmitting elements of the phased array. The χ.sup.(2) insulating dielectric material may be an organic polymer. The electro-optical device may further include, in part, a multitude of sensors each associated with a different one of the phase modulators. Each sensor is adapted to receive a phase modulated signal generated by the sensor's associated phase modulator. The electro-optical device may further include, in part, a multitude of amplitude modulators each associated with a different one of the multitude of phase modulators.