There is described an optical phase modulator generally having a substrate; a waveguide mounted to the substrate and extending along a path of the substrate, the waveguide having a first series of phase shift units distributed along the waveguide, each phase shift unit having two Bragg gratings being spaced apart from one another along the path and a cavity between the two spaced-apart Bragg gratings; and a modulation circuit configured for driving a length of the series of phase shift units of the waveguide in accordance with a modulation signal thereby modulating a refractive index of the waveguide to induce a phase shift to an optical signal propagating along the waveguide.

A hybrid photonic chip comprising a plurality of semiconductor materials arranged to define a chip providing a function, wherein at least a first part of the chip is formed of materials which can be fabricated using a CMOS technique; and at least a second part of the chip which comprises non-linear crystal material and is not subjected to etching process; wherein the second part of the chip in conjunction with the first part is configured to support a propagating low loss single mode.

A light modulator for amplifying an intensity of incident light and modulating a phase of the incident light is provided. The light modulator includes: a first distributed Bragg reflector (DBR) layer having a first reflectivity and comprising at least two first refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; a second DBR layer having a second reflectivity and comprising at least two second refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; and an active layer disposed between the first DBR layer and the second DBR layer, and comprising a quantum well structure.

Power consumption in MZI-based integrated photonic switches or filters throughout the operational life can be reduced by reducing fabrication-induced phase misalignment between the unpowered operational mode of the switch or filter and the predominant switch state, and/or by enabling low-power compensation for any such misalignment. In various embodiments, misalignment is reduced by increasing the width of the waveguides implementing the interferometer arms of the MZI, and/or by structuring a region containing the MZI symmetrically to diminish stress-induced misalignment. In some embodiments, phase tuners are used to actively compensate for any phase misalignment, with a tuner drive voltage substantially lower than used to switch to the non-dominant state.

In an embodiment, a method and apparatus for increasing bandwidth of an optical modulator by applying a first voltage applied to a beginning of a resistive line and applying a second voltage applied to an end of the resistive line; wherein the first voltage is less than the second voltage.

Provided are an optical modulating device and a system including the optical modulating device. The optical modulating device includes a substrate, and a phase modulator formed on the substrate and including a Fabry-Perot cavity. The Fabry-Perot cavity of the phase modulator includes a first reflective layer, a second reflective layer, and a tunable core formed between the first reflective layer and the second reflective layer, wherein the tunable core is formed of a semiconductor material and is configured to modulate a phase of light corresponding to modulation of a refractive index of the tunable core according to electrical control.

An optical phase shifter and a method of making the same are disclosed. The phase shifter includes a substrate, a p-doped electrode and an n-doped electrode on the substrate, a first doped semiconductor layer on the p-doped electrode or the n-doped electrode and in electrical contact with the other electrode, a second doped semiconductor layer on the first doped semiconductor layer, a first vertical region electrically connecting the second doped semiconductor layer with the one electrode, and a cladding layer on or over the second semiconductor layer, the first vertical region, and at least a first sidewall of each of the first and second semiconductor layers. The p-doped electrode and the n-doped electrode form a p-n junction at an interface therebetween. The first and second doped semiconductor layers have the same doping type as the other electrode and the one electrode, respectively.

Power consumption in MZI-based integrated photonic switches or filters throughout the operational life can be reduced by reducing fabrication-induced phase misalignment between the unpowered operational mode of the switch or filter and the predominant switch state, and/or by enabling low-power compensation for any such misalignment. In various embodiments, misalignment is reduced by increasing the width of the waveguides implementing the interferometer arms of the MZI, and/or by structuring a region containing the MZI symmetrically to diminish stress-induced misalignment. In some embodiments, phase tuners are used to actively compensate for any phase misalignment, with a tuner drive voltage substantially lower than used to switch to the non-dominant state.

An optical modulator includes a dielectric layer and a waveguide. The waveguide is disposed on the dielectric layer. The waveguide includes an electrical coupling portion, a slab portion, and an optical coupling portion. The slab portion is sandwiched between the electrical coupling portion and the optical coupling portion. The slab portion has at least two sub-portions having different heights. A maximum height of the slab portion is smaller than a height of the electrical coupling portion.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.