A semiconductor device includes a floating gate that can be charged in a nonvolatile manner. The floating gate is also structured as an optical waveguide, and maybe optically coupled to a photonic circuit, such as an interferometer.

An optical transmission device includes: a substrate; a waveguide that is provided in the substrate and transmits an optical signal; a signal wiring that is provided in the substrate and transmits an electric signal; and a silicon wiring that is provided in the substrate and is silicon added with an impurity. The signal wiring is placed in an area of the substrate, the area being away from an end of the substrate by a predetermined distance or more. One end of the silicon substrate is connected to the signal wiring, and the other end of the silicon wiring extends to the end of the substrate.

A method of processing by controlling one or more beam characteristics of an optical beam may include: launching the optical beam into a first length of fiber having a first refractive-index profile (RIP); coupling the optical beam from the first length of fiber into a second length of fiber having a second RIP and one or more confinement regions; modifying the one or more beam characteristics of the optical beam in the first length of fiber, in the second length of fiber, or in the first and second lengths of fiber; confining the modified one or more beam characteristics of the optical beam within the one or more confinement regions of the second length of fiber; and/or generating an output beam, having the modified one or more beam characteristics of the optical beam, from the second length of fiber. The first RIP may differ from the second RIP.

The present embodiment relates to a light-emitting device comprising a reflective metasurface modulating a phase for each of pixels constituting a one- or two-dimensional array. The light-emitting device comprises a surface emitting laser element, a light guide layer, and the metasurface. The metasurface has a light transmissive layer including a dielectric layer, one metal film on one surface thereof, and the other metal film on the other surface thereof. In each of unit regions corresponding to the pixels, the light transmissive layer includes a portion exposed without being covered with the metal film. The width of each unit region and the thickness of the light transmissive layer are smaller than the wavelength of the laser light to the metasurface. The metasurface modulates the phase of the laser light for each unit region. A first light output surface outputs the modulated laser.

An optical device that includes means for thermal stabilization and control is described. The optical device can be a ring resonator, or another device that requires accurate control of the phase of the optical signal. In an example involving an optical resonator, a thermal stabilization system includes a temperature sensor, a control circuit, and a heater local to the resonator. The temperature sensor can be a bandgap temperature sensor formed of a pair of matched p/n junctions biased in operation at different junction currents.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

In some embodiments, the present disclosure relates to a modulator device that includes an input terminal configured to receive impingent light. A first waveguide has a first output region and a first input region that is coupled to the input terminal. A second waveguide is optically coupled to the first waveguide and has second input region and a second output region that is coupled to the input terminal. An output terminal coupled to the first output region of the first waveguide and the second output region of the second waveguide is configured to provide outgoing light that is modulated. A heater structure is configured to provide heat to the first waveguide to induce a temperature difference between the first and second waveguides. A gas-filled isolation structure is proximate to the heater structure and is configured to thermally isolate the second waveguide from the heat provided to the first waveguide.

Disclosed are a color conversion structure, a display apparatus, and a method for manufacturing the color conversion structure. The color conversion structure includes a base, a photonic crystal structure provided on the base, and quantum dots included in the photonic crystal structure. The color conversion structure has a transferable structure.

A bandpass filter may include a set of layers. The set of layers may include a first subset of layers. The first subset of layers may include hydrogenated germanium (Ge:H) with a first refractive index. The set of layers may include a second subset of layers. The second subset of layers may include a material with a second refractive index. The second refractive index may be less than the first refractive index.