The present disclosure is directed to systems for tuning nanocube plasmonic resonators and methods for forming tunable plasmonic resonators. A tunable plasmonic resonator system can include a substrate and a nanostructure positioned on a surface of the substrate. The substrate can include a semiconductor material having a carrier density distribution. A junction can be formed between the nanostructure and the substrate forming a Schottky junction. Changing the carrier density distribution of the semiconductor material can change a plasmonic response of the plasmonic resonator.

The optical device includes an optical modulator positioned on a base. The modulator includes a ridge extending upward from the base. The ridge includes an electro-absorption medium through which light signals are guided. A thermal conductor is positioned so as to conduct thermal energy away from the ridge. The distance between the thermal conductor and the ridge changes along a length of at least a portion of the ridge.

The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses a patterned photo-resist layer as a masking layer to perform selective quenching on QD layer with a quencher to obtain selectively quenched QD layer, which simplifies QD CF substrate manufacturing process and reduces cost. The QD CF substrate does not use blue QD material in QD layer, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency and reduce material cost. The QD layer is a selectively quenched QD layer, and the portion of the QD layer located above the organic transparent photo-resist layer is quenched by the quencher, and will not emit light when excited by backlight. As such, the invention achieves using the QD material to improve color gamut and brightness, avoid color impurity at blue sub-pixels caused by light mixture, and the manufacturing method is simple.

A method for increasing the bandwidth of an electroabsorption modulator (EAM) includes the following steps. First, a plurality of p-i-n active waveguides for the EAM are defined on a p-i-n optical waveguide forming an EAM having a shorter p-i-n active waveguide length. Then, the bandwidth of the EAM can be increased. Second, the high-impedance transmission lines are used in series to connect the EAM sections to reduce the microwave reflection and then increase the device bandwidth. Finally, the impedance-controlled transmission lines for the signal input and output can not only reduce the parasitic effects resulting from packaging, but also reduce the microwave reflection resulting from the impedance mismatch at the device input and load.

An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

In one embodiment, an electro-absorption modulator receives an optical light from an optical light source and outputs a modulated optical signal. The electro-absorption modulator includes a bias voltage used to set a predetermined modulation performance and an output power of the electro-absorption modulator. A controller measures a photocurrent generated by the electro-absorption modulator and uses the photocurrent as a reference to automatically control the bias voltage of the electro-absorption modulator to maintain the predetermined modulation performance and the output power of the electro-absorption modulator when a detuning change occurs between the electro-absorption modulator and the optical light source throughout the lifetime of transmitters based on an EML device.

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

The present invention relates to a variable light transmittance element including a variable light transmittance structure, wherein the variable light transmittance structure includes: a first electrode; a variable light transmittance layer made of a transparent semiconductor material in which metal nanoparticles are dispersed, and electrically connected to the first electrode; a second electrode; and an insulating layer interposed between the variable light transmittance layer and the second electrode, and also relates to a color filter for a display device and smart window including the same. The variable light transmittance element according to the present invention induces a change in the localized surface plasmon resonance (LSPR) state by applying a voltage to both ends of the variable light transmittance stack structure including the electrode/insulation layer/metal nanoparticle-containing transparent semiconductor layer, and thus the light transmittance and color of the metal nanoparticle-containing transparent semiconductor layer may be freely changed.

Provided is an optical device including a radio frequency (RF) signal source configured to electrically provide an RF signal, a first diode configured to operate as a laser diode (LD) or an electro-absorption modulator (EAM) in response to the RF signal, a second diode configured to share an N region of the first diode, be serially connected to the first diode, and have a P region connected to a ground to operate as a capacitor for series push-pull operation with the first diode, and a resistor connected between the N region and the ground.