An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.

Photonic devices having a photonic waveguiding layer, and a cladding layer, disposed on the photonic waveguiding layer, and where the cladding section is a material comprising Scandium. The cladding layer may include a material comprising Al.sub.1-xSc.sub.xN material where 0<x≤0.45.

A quantum dot film, a quantum dot light-emitting assembly and a display device are provided. The quantum dot film includes: a quantum dot layer; and a conductive layer arranged on at least a side of the quantum dot layer along a thickness direction, and the conductive layer includes nano-sized metal particles, and at least a portion of the nano-sized metal particles are configured to generate a surface plasmon resonance under electromagnetic radiation. The luminescence efficiency and intensity of the quantum dot layer can be effectively improved by arranging the conductive layer on at least a side of the quantum dot layer.

A color filter substrate includes: a first base, a first metal wire grid polarizing layer, and first sub-pixel units, second sub-pixel units and third sub-pixel units. The first sub-pixel unit includes a first light conversion pattern emitting light of a second color under excitation of incident light of a first color and a first reflective pattern reflecting the light of the first color and transmitting the light of the second color. The second sub-pixel unit includes a second light conversion pattern emitting light of a third color under the excitation of the incident light of the first color and a second reflective pattern reflecting the light of the first color and transmitting the light of the third color. The third sub-pixel unit is configured to receive the light of the first color and emit light of a fourth color or the light of the first color.

The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.

The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.

A semiconductor optical integrated element according to the present disclosure includes:; a first optical amplifier which amplifies a signal beam inputted from a first end surface; a first passive optical waveguide which guides the amplified signal beam toward a direction different from a direction of the optical waveguide; an optical splitter which splits the guided signal beam into a plurality of signal beams; a phase modulator which is connected to the first passive optical waveguide and performs phase modulation on the plurality of signal beams; a second passive optical waveguide which guides each phase-modulated signal beam toward the direction of the optical waveguide; an optical multiplexer which multiplexes the plurality of phase-modulated signal beams into one signal beam; and a second optical amplifier which amplifies the signal beam guided by the second passive optical waveguide, and whose saturated beam output is smaller than that of the first optical amplifier.

A semiconductor optical integrated element according to the present disclosure includes:; a first optical amplifier which amplifies a signal beam inputted from a first end surface; a first passive optical waveguide which guides the amplified signal beam toward a direction different from a direction of the optical waveguide; an optical splitter which splits the guided signal beam into a plurality of signal beams; a phase modulator which is connected to the first passive optical waveguide and performs phase modulation on the plurality of signal beams; a second passive optical waveguide which guides each phase-modulated signal beam toward the direction of the optical waveguide; an optical multiplexer which multiplexes the plurality of phase-modulated signal beams into one signal beam; and a second optical amplifier which amplifies the signal beam guided by the second passive optical waveguide, and whose saturated beam output is smaller than that of the first optical amplifier.

A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.