A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

A backlight module and a display device are disclosed. The backlight module includes a light emitting element array including a plurality of light emitting elements that emit blue light; a quantum dot film disposed on a light-emergent side of the light emitting element array and having a middle area and an edge area, the edge area surrounding the middle area; and a light conversion layer disposed on the light-emergent side of the light emitting element array, wherein an orthographic projection of the light conversion layer on the quantum dot film is located in the edge area of the quantum dot film, a material of the light conversion layer includes a first light conversion material configured to emit red light under excitation of light from the light emitting element and a second light conversion material configured to emit green light under excitation of light from the light emitting element.

A display panel includes an upper display substrate. The upper display substrate includes a base substrate and first to fourth color filters. The first and second color filters overlap first and second pixel areas. The third color filter overlaps a light-blocking area and a third pixel area and has a first opening and a second opening corresponding to the first pixel area and second pixel area, respectively. The fourth color filter overlaps the first pixel area and the second pixel area and has a third opening corresponding to the third pixel area.

Provided is a light modulation element including a first contact layer, a second contact layer, an active layer provided between the first contact layer and the second contact layer, a first contact plug provided between the first contact layer and the active layer, and a second contact plug provided between the second contact layer and the active layer, wherein a width of at least one of the first contact plug and the second contact plug is less than a width of the active layer.

A quantum dot color filter substrate includes a substrate, a color filter layer, a quantum dot film layer, and a transparent conductive layer disposed between the color filter layer and the quantum dot film layer. The transparent conductive layer is externally connected to a power module to form a closed circuit. When a voltage is applied to the transparent conductive layer, the transparent conductive layer may generate heat, which can quickly remove solvents in a quantum dot film layer.

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

A method includes receiving input light having an input wavelength in a first optical resonator for causing resonance of the input light in the first optical resonator. The first optical resonator includes a non-linear optical medium. The method also includes converting at least a portion of the input light to a combination of first output light having a first output wavelength that is different from the input wavelength and second output light having a second output wavelength that is different from the input wavelength and the first output wavelength by passing the input light through the non-linear optical medium. The method further includes causing resonance of the first output light and the second output light in a second optical resonator. A portion of the first optical resonator is coupled to a portion of the second optical resonator.

Provided is an optical device including a radio frequency (RF) signal source configured to electrically provide an RF signal, a first diode configured to operate as a laser diode (LD) or an electro-absorption modulator (EAM) in response to the RF signal, a second diode configured to share an N region of the first diode, be serially connected to the first diode, and have a P region connected to a ground to operate as a capacitor for series push-pull operation with the first diode, and a resistor connected between the N region and the ground.