A light modulator for amplifying an intensity of incident light and modulating a phase of the incident light is provided. The light modulator includes: a first distributed Bragg reflector (DBR) layer having a first reflectivity and comprising at least two first refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; a second DBR layer having a second reflectivity and comprising at least two second refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; and an active layer disposed between the first DBR layer and the second DBR layer, and comprising a quantum well structure.

Apparatuses and methods for a temperature insensitive electro-absorption modulator and laser. The device comprising a laser capable of emitting light. The laser itself includes a laser gain section, a first mirror and a second mirror. Each of the mirrors are coupled to the laser gain section. The laser gain section contains quantum wells. The first mirror and the second mirror have a wavelength bandwidth sufficient for a lasing wavelength range of the laser. A modulator is coupled to the laser to receive the light and is capable of modulating the light to vary the output from the modulator. The modulator contains quantum wells and has a quantum well confinement factor that is greater than 0.1. An output coupler is coupled to the modulator and the output coupler has a back reflection that is less than half of a back reflection of the second mirror. The laser has a lasing wavelength that tracks the absorption spectrum of the modulator. The device is operated at a temperature range comprising a first temperature and a second temperature, wherein the second temperature is greater than the first temperature by at least 15 degrees Celsius.

A variable wavelength light source and an apparatus including the same are disclosed. The variable wavelength light source includes: a first waveguide; a second waveguide spaced apart from the first waveguide; a first optical amplifier including a first gain medium; and a second optical amplifier including a second gain medium that is different from the first gain medium.

Provided is a technique for enabling an α parameter to be approximated to zero. A multiple quantum well structure includes a layer structure including a first barrier layer, an intermediate layer, a well layer, and a second barrier layer. The conduction band energies of the first and second barrier layers, the intermediate layer, and the well layer are larger in this order, and the valence band energies of the intermediate layer, the well layer, and the first and second barrier layers are larger in this order.

A display apparatus includes a liquid crystal panel; light sources configured to emit blue light; a reflective sheet including four edge portions and a first hole and a second hole on each of the four edge portions of the reflective sheet, the first hole disposed at a first distance from an edge of the reflective sheet, and the second hole disposed at a second distance from the edge of the reflective sheet, wherein the second distance is greater than the first distance; and first and second light conversion dots, wherein the first light conversion dots are disposed around the first hole of the reflective sheet, and the second light conversion dots are disposed around the second hole of the reflective sheet, wherein a size of each of the first light conversion dots is greater than a size of each of the second light conversion dots.

Provided is a technique for reducing, using a simple circuit configuration, an amplitude difference between electric signals that are input to respective optical waveguide arms. An optical modulator includes: an optical demultiplexer that splits continuous wave light as received; first and second optical waveguide arms through which the continuous wave light as split propagates; an optical phase n shifter that introduces a phase shift of π to the continuous wave light as split; an optical multiplexer combines the continuous wave light propagating through the first and second optical waveguide arms; first and second signal electrodes that respectively input the electric signals to the first and second optical waveguide arms; a junction capacitance connected in shunt to at least one of the first and second signal electrodes; and a DC voltage source that applies a DC voltage to the junction capacitance.

A display device includes a substrate, a display element layer disposed on the substrate, and a protective layer disposed on the display element layer. The display device contains a light absorber represented by Formula 1, and the damage to the display device that may be caused by the UV-A light in the wavelength range of about 315 nm to about 400 nm may be prevented or reduced, and the reliability of the display device may be maintained:

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Preferable simultaneous achievement of the target characteristics with respect to both of the modulation bandwidth and the extinction ratio in the optical intensity modulation using the electro-absorption optical modulator is realized with a simple circuit configuration. The modulator integrated semiconductor laser element includes a plurality of EA modulators disposed in series in an optical signal path, and each adapted to absorb light in accordance with an applied voltage. The modulator driver for supplying the EA modulator with the applied voltage is provided for each of the EA modulators. The plurality of modulator drivers generates the applied voltage common to the plurality of EA modulators in accordance with a control signal. The modulator lengths of the plurality of EA modulators are set so that the closer to the light source the EA modulator is, the shorter the modulator length is.

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

In an embodiment, a phase shifter includes: a light input end; a light output end; a p-type semiconductor material, and an n-type semiconductor material contacting the p-type semiconductor material along a boundary area, wherein the boundary area is greater than a length from the light input end to the light output end multiplied by a core width of the phase shifter.