An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

A semiconductor device includes a base substrate comprising a first region and a second region, a photonics device disposed in the first region, the photonics device comprising a first doped layer disposed on the base substrate, and a second doped layer disposed on the first doped layer so that at least a portion vertically overlaps the first doped layer, the second doped layer having a first vertical thickness, and a transistor disposed in the second region, the transistor comprising a semiconductor layer disposed on the base substrate and horizontally spaced apart from the first doped layer, and a gate electrode horizontally spaced apart from the second doped layer and disposed on the semiconductor layer, disposed at the same vertical level as that of the second doped layer, and having a second vertical thickness equal to the first vertical thickness.

An optical modulator includes a substrate having a main surface including a first area and a second area, an optical modulation portion disposed on the first area, and an optical waveguide portion disposed on the second area. The optical modulation portion includes a first mesa waveguide and an electrode connected to the first mesa waveguide. The first mesa waveguide includes a p-type semiconductor layer, a first core layer, and an n-type semiconductor layer. The optical waveguide portion includes a second mesa waveguide. The second mesa waveguide includes a first cladding layer, a second core layer, and a second cladding layer. The second core layer is optically coupled to the first core layer. The first cladding layer contains a p-type dopant and protons. The second cladding layer contains an n-type dopant.

An optical modulator includes a substrate having a main surface including a first area and a second area, an optical modulation portion disposed on the first area, and an optical waveguide portion disposed on the second area. The optical modulation portion includes a first mesa waveguide and an electrode connected to the first mesa waveguide. The first mesa waveguide includes a p-type semiconductor layer, a first core layer, and an n-type semiconductor layer. The optical waveguide portion includes a second mesa waveguide. The second mesa waveguide includes a first cladding layer, a second core layer, and a second cladding layer. The second core layer is optically coupled to the first core layer. The first cladding layer contains a p-type dopant and protons. The second cladding layer contains an n-type dopant.

A metal-oxide semiconductor (MOS) structure to achieve a LIDAR beam steering, comprising: a n-number of waveguides, wherein the n-number of waveguides are connected to a laser transmitter and a receiver; a n-number phase shifters; wherein the MOS structure comprises a doping concentration of an N-drift region that is varied and a different drain-source current (IDS) to gate-source voltage (VGS) or drain-source voltage (VDS) characteristics are obtained, and wherein the IDS exists when the VGS is positive, and a magnitude of the IDS depends on a magnitude of the VGS and the VDS apart from the doping concentration of N− drift region, wherein the n-number of waveguides are connected to a laser transmitter and a receiver device, wherein the VGS is used as a control signal, wherein the VDS is set to a power supply voltage (VDD) based on at least one doping profile of the N-drift region of the MOS structure, wherein a plurality of different drain-to-source currents (IDS) are provided through the n-number of phase shifters, and wherein with a set of specified drain currents (IDS), a phase is shifted differently by the n-number of phase shifters and the beam is steered in a specified direction, and wherein only one control signal is used to achieve beam steering.

A metal-oxide semiconductor (MOS) structure to achieve a LIDAR beam steering, comprising: a n-number of waveguides, wherein the n-number of waveguides are connected to a laser transmitter and a receiver; a n-number phase shifters; wherein the MOS structure comprises a doping concentration of an N-drift region that is varied and a different drain-source current (IDS) to gate-source voltage (VGS) or drain-source voltage (VDS) characteristics are obtained, and wherein the IDS exists when the VGS is positive, and a magnitude of the IDS depends on a magnitude of the VGS and the VDS apart from the doping concentration of N− drift region, wherein the n-number of waveguides are connected to a laser transmitter and a receiver device, wherein the VGS is used as a control signal, wherein the VDS is set to a power supply voltage (VDD) based on at least one doping profile of the N-drift region of the MOS structure, wherein a plurality of different drain-to-source currents (IDS) are provided through the n-number of phase shifters, and wherein with a set of specified drain currents (IDS), a phase is shifted differently by the n-number of phase shifters and the beam is steered in a specified direction, and wherein only one control signal is used to achieve beam steering.

Information processing systems, devices, articles and methods are configured for receiving a first photon at a first switch including a first region of semiconductor material, and a first local defect disposed in the first region of semiconductor material. The first local defect has a first defect computational state. Based on, at least, the first defect computational state of the first local defect, a second photon is directed to travel by a first output path communicatively coupled to the first local defect, or a second output path communicatively coupled to the first local defect.

Information processing systems, devices, articles and methods are configured for receiving a first photon at a first switch including a first region of semiconductor material, and a first local defect disposed in the first region of semiconductor material. The first local defect has a first defect computational state. Based on, at least, the first defect computational state of the first local defect, a second photon is directed to travel by a first output path communicatively coupled to the first local defect, or a second output path communicatively coupled to the first local defect.

A thermo-optic phase shifter comprises an optical waveguide comprising a P-type region comprising a first contact, an N-type region comprising a second contact, and a waveguide region disposed between the P-type region and the N-type region and having a raised portion. The thermo-optic phase shifter further comprises one or more heating elements. The one or more heating elements include one or more discrete resistive heating elements or the P-type and N-type regions driven as resistive heating elements.