A semiconductor optical integrated element of the present disclosure includes: a laser diode portion which is provided on one end side above a substrate, has a first optical waveguide, and emits a laser beam; a modulator portion which is provided on another end side, has a second optical waveguide, and modulates the laser beam; a separation region provided between the laser diode portion and the modulator portion; and a pair of grooves provided on both sides along the first optical waveguide and the second optical waveguide. The second optical waveguide in the separation region and the second optical waveguide in a part on the separation region side in the modulator portion have a buried structure, and the second optical waveguide in a remaining part in the modulator portion has a high-mesa-ridge structure.

A semiconductor optical integrated element of the present disclosure includes: a laser diode portion which is provided on one end side above a substrate, has a first optical waveguide, and emits a laser beam; a modulator portion which is provided on another end side, has a second optical waveguide, and modulates the laser beam; a separation region provided between the laser diode portion and the modulator portion; and a pair of grooves provided on both sides along the first optical waveguide and the second optical waveguide. The second optical waveguide in the separation region and the second optical waveguide in a part on the separation region side in the modulator portion have a buried structure, and the second optical waveguide in a remaining part in the modulator portion has a high-mesa-ridge structure.

Photonic devices are disclosed including a first cladding layer, a first electrical contact comprising a first lead coupled to a first dielectric portion, a second electrical contact comprising a second lead coupled to a second dielectric portion, a waveguide structure comprising a slab layer comprising a first material, and a second cladding layer. The slab layer may be coupled to the first dielectric portion of the first electrical contact and the second dielectric portion of the second electrical contact. The first dielectric portion and the second dielectric portion may have a dielectric constant greater than a dielectric constant of the first material.

An optical waveguide element includes a substrate having an electro-optic effect, an optical waveguide formed in the substrate, and a control electrode arranged on the substrate to modulate a light wave propagating through the optical waveguide. The control electrode includes a signal electrode and a ground electrode. The signal electrode and the ground electrode are arranged along a modulation effect portion of the optical waveguide that performs modulation. In a shape of a bottom surface of the ground electrode facing the substrate, a slit separating the ground electrode into a first ground electrode close to the signal electrode and a second ground electrode far from the signal electrode is formed in a range corresponding to the modulation effect portion.

This disclosure relates to a spatial light modulator, etc., the spatial light modulator being capable of dynamically controlling the phase distribution of light, and provided with a structure having a smaller pixel arrangement period and suitable for high-speed operation. The spatial light modulator includes a substrate. The substrate has a front surface, a back surface, and through-holes arranged one-dimensionally or two-dimensionally and penetrating between the front surface and the back surface. The spatial light modulator further includes layered structures each covering the inner walls of the through-holes. Each layered structure includes a first electroconductive layer on the inner wall, a dielectric layer on the first electroconductive layer and having optical transparency, and a second electroconductive layer on the dielectric layer and having optical transparency. At least one of the first and second electroconductive layers is electrically isolated for each group including one or more through-holes.

This disclosure relates to a spatial light modulator, etc., the spatial light modulator being capable of dynamically controlling the phase distribution of light, and provided with a structure having a smaller pixel arrangement period and suitable for high-speed operation. The spatial light modulator includes a substrate. The substrate has a front surface, a back surface, and through-holes arranged one-dimensionally or two-dimensionally and penetrating between the front surface and the back surface. The spatial light modulator further includes layered structures each covering the inner walls of the through-holes. Each layered structure includes a first electroconductive layer on the inner wall, a dielectric layer on the first electroconductive layer and having optical transparency, and a second electroconductive layer on the dielectric layer and having optical transparency. At least one of the first and second electroconductive layers is electrically isolated for each group including one or more through-holes.

Embodiments presented in this disclosure generally relate to optical signal processing. More specifically, embodiments disclosed herein are directed to a semiconductor-insulator-semiconductor capacitor (SISCAP) modulator. One embodiment includes an optical modulator having a capacitive element configured to modulate an optical signal. The capacitive element includes a single-crystal semiconductor layer, a silicon germanium layer, and a dielectric region between the single-crystal semiconductor layer and the silicon germanium layer.

A dual optical frequency comb generator incudes a semiconductor substrate, a first optical frequency comb laser light source including a first resonator, a second optical frequency comb laser light source including a second resonator and differing in repetition frequency of optical pulses from the first optical frequency comb laser light source, two or more outputters including first and second outputters, a first optical waveguide connecting the first optical frequency comb laser light source with the first outputter, a second optical waveguide connecting the second optical frequency comb laser light source with the second outputter, and a third optical waveguide that branches off from the first optical waveguide and joins the second optical waveguide. The first optical frequency comb laser light source, the second optical frequency comb laser light source, the two or more outputters, and the optical waveguides are integrated on the semiconductor substrate.

An optical modulator includes, a semiconductor substrate, an optical waveguide portion disposed on the semiconductor substrate, a first P-N junction disposed on the semiconductor substrate, and a second P-N disposed on the semiconductor substrate. The optical waveguide portion provides an optical path for light that is to be modulated. The first P-N junction is disposed on the semiconductor substrate along the optical path and defines a border between an N-doped portion disposed on the semiconductor substrate and a P-doped portion disposed on the semiconductor substrate. The second P-N junction is disposed on a portion of the semiconductor substrate alongside the optical path and spaced apart from the first P-N junction.

An optical modulator includes, a semiconductor substrate, an optical waveguide portion disposed on the semiconductor substrate, a first P-N junction disposed on the semiconductor substrate, and a second P-N disposed on the semiconductor substrate. The optical waveguide portion provides an optical path for light that is to be modulated. The first P-N junction is disposed on the semiconductor substrate along the optical path and defines a border between an N-doped portion disposed on the semiconductor substrate and a P-doped portion disposed on the semiconductor substrate. The second P-N junction is disposed on a portion of the semiconductor substrate alongside the optical path and spaced apart from the first P-N junction.