A waveguide device comprises a substrate comprising an electro-optical material; a waveguide formed in the electro-optical material; and a plurality of electrodes formed in a vicinity of the waveguide. The electro-optical material has a first refractive index. The waveguide comprises a plurality of tracks. The tracks comprise a second refractive index smaller than the first refractive index, are parallel to each other with a common direction defining a direction of the waveguide, and form an arrangement in a plane perpendicular to the direction of the waveguide. The arrangement comprises at least 40 equilateral triangles of identical side lengths, wherein all three corners of each of the equilateral triangles each coincide with a different track of the plurality of tracks in the plane perpendicular to the direction of the waveguide.

A waveguide device comprises a substrate comprising an electro-optical material; a waveguide formed in the electro-optical material; and a plurality of electrodes formed in a vicinity of the waveguide. The electro-optical material has a first refractive index. The waveguide comprises a plurality of tracks. The tracks comprise a second refractive index smaller than the first refractive index, are parallel to each other with a common direction defining a direction of the waveguide, and form an arrangement in a plane perpendicular to the direction of the waveguide. The arrangement comprises at least 40 equilateral triangles of identical side lengths, wherein all three corners of each of the equilateral triangles each coincide with a different track of the plurality of tracks in the plane perpendicular to the direction of the waveguide.

The optical modulator includes an optical modulation element having a first optical waveguide, a second optical waveguide, a first electrode which applies an electric field to the first optical waveguide, and a second electrode which applies an electric field to the second optical waveguide, and a control unit configured to control an applied voltage between the first electrode and the second electrode. When a half-wave voltage of the optical modulation element is Vπ and a null point voltage of the optical modulation element is Vn, the control unit sets an operating point Vd in a range of Vn+0.50Vπ≤Vd≤Vn+0.75Vπ or Vn−0.75Vπ≤Vd≤Vn−0.50Vπ and sets an applied voltage width Vpp, which is an amplitude of an applied voltage applied to the optical modulation element, in a range of 0.22Vπ≤Vpp≤0.50Vπ.

The optical modulator includes an optical modulation element having a first optical waveguide, a second optical waveguide, a first electrode which applies an electric field to the first optical waveguide, and a second electrode which applies an electric field to the second optical waveguide, and a control unit configured to control an applied voltage between the first electrode and the second electrode. When a half-wave voltage of the optical modulation element is Vπ and a null point voltage of the optical modulation element is Vn, the control unit sets an operating point Vd in a range of Vn+0.50Vπ≤Vd≤Vn+0.75Vπ or Vn−0.75Vπ≤Vd≤Vn−0.50Vπ and sets an applied voltage width Vpp, which is an amplitude of an applied voltage applied to the optical modulation element, in a range of 0.22Vπ≤Vpp≤0.50Vπ.

An electro-optic modulator includes an optical structure and an electrical structure. The optical structure includes an input waveguide, a beam splitter, a first waveguide arm, a second waveguide arm, a beam combiner, and an output waveguide; each of the first waveguide arm and the second waveguide arm includes a conventional waveguide region. The first waveguide arm further includes a first modulating region, a second modulating region, and a third modulating region. The second waveguide arm further includes a fourth modulating region, a fifth modulating region, and a sixth modulating region; the electrical structure includes a traveling wave electrode including a signal-ground-signal electrode structure. The traveling wave electrode further includes a signal input region, a modulating electrode region, and a matched resistor region. The modulating electrode region includes a first signal electrode, a ground electrode, and a second signal electrode.

An electro-optic modulator includes an optical structure and an electrical structure. The optical structure includes an input waveguide, a beam splitter, a first waveguide arm, a second waveguide arm, a beam combiner, and an output waveguide; each of the first waveguide arm and the second waveguide arm includes a conventional waveguide region. The first waveguide arm further includes a first modulating region, a second modulating region, and a third modulating region. The second waveguide arm further includes a fourth modulating region, a fifth modulating region, and a sixth modulating region; the electrical structure includes a traveling wave electrode including a signal-ground-signal electrode structure. The traveling wave electrode further includes a signal input region, a modulating electrode region, and a matched resistor region. The modulating electrode region includes a first signal electrode, a ground electrode, and a second signal electrode.

There is set forth herein an integrated photonics structure having a waveguide disposed within a dielectric stack of the integrated photonics structure, wherein the integrated photonics structure further includes a field generating electrically conductive structure disposed within the dielectric stack; and a heterogenous structure attached to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure. There is set forth herein a method including fabricating an integrated photonics structure, wherein the fabricating an integrated photonics structure includes fabricating a waveguide within a dielectric stack, wherein the fabricating an integrated photonics structure further includes fabricating a field generating electrically conductive structure within the dielectric stack; and attaching a heterogenous structure to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure.

There is set forth herein an integrated photonics structure having a waveguide disposed within a dielectric stack of the integrated photonics structure, wherein the integrated photonics structure further includes a field generating electrically conductive structure disposed within the dielectric stack; and a heterogenous structure attached to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure. There is set forth herein a method including fabricating an integrated photonics structure, wherein the fabricating an integrated photonics structure includes fabricating a waveguide within a dielectric stack, wherein the fabricating an integrated photonics structure further includes fabricating a field generating electrically conductive structure within the dielectric stack; and attaching a heterogenous structure to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure.

An optical waveguide device includes a substrate on which an intermediate layer, a thin-film LN layer of lithium niobate, and a buffer layer are stacked; an optical waveguide formed in the thin-film LN layer; and a plurality of electrodes near the optical waveguide. The intermediate layer and the buffer layer contain a same material of a metal element of any one of group 3 of group 18 of a periodic table of elements.

An optical waveguide device includes a substrate on which an intermediate layer, a thin-film LN layer of lithium niobate, and a buffer layer are stacked; an optical waveguide formed in the thin-film LN layer; and a plurality of electrodes near the optical waveguide. The intermediate layer and the buffer layer contain a same material of a metal element of any one of group 3 of group 18 of a periodic table of elements.