The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient .sub.c, e.g., transverse effective linear E-O coefficient .sup.T.sub.c , more than 1100 pm/V and longitudinal effective linear E-O coefficient .sup.l.sub.c up to 527 pm/V, which results in a very low half-wavelength voltage V.sup.l.sub. below 200V and V.sup.T.sub. below about 87V in a wide number of modulation, communication, laser, and industrial uses.

The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient .sub.c, e.g., transverse effective linear E-O coefficient .sup.T.sub.c , more than 1100 pm/V and longitudinal effective linear E-O coefficient .sup.l.sub.c up to 527 pm/V, which results in a very low half-wavelength voltage V.sup.l.sub. below 200V and V.sup.T.sub. below about 87V in a wide number of modulation, communication, laser, and industrial uses.

An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.

An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.

A structure for an optoelectronics platform and a method of fabricating a structure for an optoelectronics platform such as a Mach-Zehnder modulator or a waveguide. The method comprises the steps of providing a substrate, and depositing a BaTi03, BTO, film on a surface of the substrate and having a thickness suitable for single mode operation with one or more possible polarization configurations with optical confinement in the BTO film at a wavelength or wavelength range of operation; wherein the substrate is chosen to provide vertical refractive index confinement in a direction perpendicular to the surface of the substrate for the single mode operation optical confinement in the BTO film at the wavelength or wavelength range of operation.

A structure for an optoelectronics platform and a method of fabricating a structure for an optoelectronics platform such as a Mach-Zehnder modulator or a waveguide. The method comprises the steps of providing a substrate, and depositing a BaTi03, BTO, film on a surface of the substrate and having a thickness suitable for single mode operation with one or more possible polarization configurations with optical confinement in the BTO film at a wavelength or wavelength range of operation; wherein the substrate is chosen to provide vertical refractive index confinement in a direction perpendicular to the surface of the substrate for the single mode operation optical confinement in the BTO film at the wavelength or wavelength range of operation.

A photorefractive (PR) polymer composite (310) is provided that includes a charge transporting polymer (CTP) matrix (311) and a photosensitizer (312) comprising a quantum dot (QD) material (314) with a first band gap (315) coupled to a nanoparticle material (317) with a second band gap (316) greater than the first band gap. The photosensitizer (312) is configured to generate a plurality of free charges (318) and to transfer the free charges to the CTP matrix (311) in response to an incident photon (320) on the PR polymer composite (310). An apparatus (500) is also provided, for writing holograms of 3D perspective views of an object from different directions within the PR polymer composite (310). A method (600) is also provided for forming the PR polymer composite.

Disclosed is a graphene-based terahertz device that includes a top graphene layer, a bottom graphene layer, and a middle layer disposed between the top graphene layer and the bottom graphene layer. The middle layer is a liquid crystal layer, a piezocrystal layer, an ionic liquid layer, or an ion gel layer. Also disclosed are methods of preparing different embodiments of the above-described graphene-based terahertz device.

Disclosed is a graphene-based terahertz device that includes a top graphene layer, a bottom graphene layer, and a middle layer disposed between the top graphene layer and the bottom graphene layer. The middle layer is a liquid crystal layer, a piezocrystal layer, an ionic liquid layer, or an ion gel layer. Also disclosed are methods of preparing different embodiments of the above-described graphene-based terahertz device.

The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient .sub.c, e.g., transverse effective linear E-O coefficient .sup.T.sub.c more than 1100 pm/V and longitudinal effective linear E-O coefficient .sup.l.sub.c up to 527 pm/V, which results in a very low half-wavelength voltage V.sup.l.sub. below 200V and V.sup.T.sub. below about 87V in a wide number of modulation, communication, laser, and industrial uses.