G02F1/055

Adjustable optical switch based on PLZST antiferroelectric photonic crystal, and adjusting and control method thereof

An adjustable optical switch based on a PLZST antiferroelectric photonic crystal, and an adjusting and control method thereof, which belongs to the technical field of micro and nano optoelectronic devices. The adjustable optical switch based on a PLZST antiferroelectric photonic crystal includes an air column type photonic crystal with a diameter of air columns of 420 nm, and a spacing of air columns of 200 nm. According to the present disclosure, a photonic crystal switch is designed by utilizing the coupling property between photonic crystals, and the central wavelength of optical waves is adjusted through the action of the electric field, so that an electro-optical switch with a central wavelength adjustable in a wide range is provided, and has a response speed of less than 1 nanosecond, and the central wavelength can be adjusted in a range of 1100 nm to 1750 nm.

Adjustable Optical Switch Based on PLZST Antiferroelectric Photonic Crystal, and Adjusting and Control Method thereof
20210223579 · 2021-07-22 ·

An adjustable optical switch based on a PLZST antiferroelectric photonic crystal, and an adjusting and control method thereof, which belongs to the technical field of micro and nano optoelectronic devices. The adjustable optical switch based on a PLZST antiferroelectric photonic crystal includes an air column type photonic crystal with a diameter of air columns of 420 nm, and a spacing of air columns of 200 nm. According to the present disclosure, a photonic crystal switch is designed by utilizing the coupling property between photonic crystals, and the central wavelength of optical waves is adjusted through the action of the electric field, so that an electro-optical switch with a central wavelength adjustable in a wide range is provided, and has a response speed of less than 1 nanosecond, and the central wavelength can be adjusted in a range of 1100 nm to 1750 nm.

HETERGENOUS INTEGRATION AND ELECTRO-OPTIC MODULATION OF III-NITRIDE PHOTONICS ON A SILICON PHOTONIC PLATFORM
20210157178 · 2021-05-27 ·

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

APPARATUS FOR PLASMONIC NANOANTENNA OPTICAL BEAM PHASE-SHIFTER AND STEERER

A pixel for creating an optical phase change includes a transparent electrical insulator, a first electrical conductor disposed on the transparent electrical insulator, the first electrical conductor comprising an antenna component and a connector component, an electrical insulator disposed on the first electrical conductor, a transparent semiconductor disposed on the electrical insulator, and a second electrical conductor disposed on the transparent semiconductor. The transparent semiconductor is sufficiently thick to prevent plasmonic resonance from occurring at an interface between the transparent semiconductor and the second electrical conductor.

TRANSPARENT PHASE CHANGE ACTUATOR

A transparent optical element may include a layer of an electroactive ceramic disposed between transparent electrodes, such that the electrodes are each oriented perpendicular to a non-polar direction of the ceramic layer. Optical properties of the optical element, including transmissivity, haze, and clarity may be improved by the application of a voltage to the electroactive ceramic, and an associated phase transformation.

Optical modulator using phase change material and device including the same

Provided are optical modulators and devices including the optical modulators. The optical modulator may include an optical modulation layer that includes a phase change material. A first electrode may be provided on a first surface of the optical modulation layer. A second electrode may be provided on a second surface of the optical modulation layer. A first phase controlling layer may be provided, the first electrode being disposed between the first phase controlling layer and the optical modulation layer. A second phase controlling layer may be provided, the second electrode being disposed between the second phase controlling layer and the optical modulation layer. Each of the first and the second phase controlling layers may have an optical thickness corresponding to an odd multiple of /4, where is a wavelength of incident light to be modulated by the optical modulator. The optical modulator may further include at least one reflective layer. The optical modulation layer may have a thickness of about 10 nm or less. An operating voltage of the optical modulator may be about 10 V or less.

PACKAGE FOR STORING FUNCTIONAL ELEMENT, SEMICONDUCTOR DEVICE AND LN MODULATOR
20210208428 · 2021-07-08 · ·

A functional element housing package includes a pin terminal disposed in an outer region of a housing for housing a functional element. A wiring substrate is connected with the pin terminal. The wiring substrate includes a through hole for receiving the pin terminal, a first metallic layer disposed around an opening of the through hole on a side of the wiring substrate which side is located close to the housing, a second metallic layer disposed around an opening of the through hole on a side of the wiring substrate which is opposed to the side located close to the housing, the second metallic layer being greater in area than the first metallic layer, a connection wiring line connected to the first metallic layer or the second metallic layer, and a solder which connects the pin terminal to each of the first metallic layer and the second metallic layer.

Systems And Methods For Integrating A-Axis Oriented Barium Titanate Thin Films On Silicon (001) Via Strain Control
20200409190 · 2020-12-31 ·

Various embodiments of the present technology enable growth of a-axis oriented barium titanate (BTO) films by inserting a relaxed strain control layer having a larger lattice constant than the c-axis of BTO and a similar thermal expansion mismatch. As a result, in-plane tensile stress causes BTO to grow with its ferroelectric polarization in-plane. Some embodiments allow for BTO films to immediately be grown on silicon with a-axis orientation, and without the need to create thick layers for relaxation. Using various embodiments of the present technology, the BTO can be grown in-plane with minimal dislocation density that is confined to the interface region.

OPTICAL MODULATOR AND OPTICAL TRANSMISSION APPARATUS USING SAME
20200379278 · 2020-12-03 ·

An initial change and a secular change in an optical characteristic and a high frequency characteristic in a case where an optical modulator is mounted in a package of an optical transmission apparatus are suppressed while improving a space utilization rate in the package of the optical transmission apparatus. An optical modulator that is electrically connected to an electric circuit configured on a circuit board, includes a package that houses an optical modulation element, in which the package has, on a bottom surface facing the circuit board, a plurality of first protruding bodies protruding from the bottom surface.

TRANSPARENT ORIENTED ELECTROACTIVE CERAMICS

An electroactive ceramic may be incorporated into a transparent optical element between transparent electrodes and may characterized by a preferred crystallographic orientation. The preferred crystallographic orientation may be aligned along a polar axis of the electroactive ceramic and substantially parallel to each of the electrodes. Optical properties of the optical element, including transmissivity, haze, and clarity may be substantially unchanged during actuation thereof and the attendant application of a voltage to the electroactive ceramic.