An optical transmitting apparatus includes a variable optical attenuator of a magneto-optical effect type disposed by spatial coupling between a light source and an optical fiber, the variable optical attenuator configured to attenuate light output from the light source and coupled to the optical fiber, according to an input driving voltage; a generator configured to generate the driving voltage of the variable optical attenuator based on information to be superimposed on the light by the variable optical attenuator, the generator inputting the generated driving voltage into the variable optical attenuator; and a controller configured to control a bias of the driving voltage generated by the generator, the controller controlling an amplitude of the driving voltage generated by the generator, based on data according to characteristics between the driving voltage and an attenuation amount of the light by the variable optical attenuator.

Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

An optical transmitting apparatus includes a variable optical attenuator of a magneto-optical effect type disposed by spatial coupling between a light source and an optical fiber, the variable optical attenuator configured to attenuate light output from the light source and coupled to the optical fiber, according to an input driving voltage; a generator configured to generate the driving voltage of the variable optical attenuator based on information to be superimposed on the light by the variable optical attenuator, the generator inputting the generated driving voltage into the variable optical attenuator; and a controller configured to control a bias of the driving voltage generated by the generator, the controller controlling an amplitude of the driving voltage generated by the generator, based on data according to characteristics between the driving voltage and an attenuation amount of the light by the variable optical attenuator.

It is described a transmitter of signals, comprising: an encoder (1) configured to generate a two-state modulation signal (x.sub.D(t)) from a first input signal (x(t)), means (2) configured to act on a second input signal (y(t)) as a function of the two-state modulation signal; the means are configured to reflect the second input signal from the transmitter in correspondence of only one state (ON) of two states (ON, OFF) of the two-state modulation signal.

A memristor element is used to create a spectrally programmable optical device. An electromagnetic field is applied across the memristor element in order to alter its spectral properties. In turn, the spectral properties of the electromagnetic radiation optically interacting with the memristor element are also altered. This alteration in spectral properties allows the memristor to be programmed to achieve a variety of transmission/reflection/absorption functions.

A memristor element is used to create a spectrally programmable optical computing device for use in, for example, a downhole environment. An electromagnetic field is applied across the memristor element in order to alter its spectral properties. In turn, the spectral properties of sample-interacted light optically interacting with the memristor element are also altered. This alteration in spectral properties allows the memristor to be programmed to achieve a variety of transmission/reflection/absorption functions.

Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.

Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.

Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.