An electro-optical modulator is provided. The electro-optical modulator comprises at least one optical waveguide, an electrode arrangement for applying a voltage across the optical waveguide. The electrode arrangement comprises a first and a second electrical line and at least two terminating resistors terminating the first and the second electrical line. The electrode arrangement comprises at least one capacitive structure that capacitively couples, but galvanically separates the two terminating resistors. The capacitive structure comprises at least two electrically conductive layers physically arranged at a position between the first and the second electrical line, wherein the at least two layers are separated by at least one dielectric layer.

This optical modulation element includes a first optical waveguide, a second optical waveguide, a first electrode for applying an electric field to the first optical waveguide, and a second electrode for applying an electric field to the second optical waveguide. The first optical waveguide and the second optical waveguide each include a ridge-shaped portion protruding from a first surface of a lithium niobate film. A first interaction length L.sub.1 that is a length of a part of the first electrode overlapping the first optical waveguide in a longitudinal direction is 0.9 mm or more and 20 mm or less. A second interaction length L.sub.2 that is a length of a part of the second electrode overlapping the second optical waveguide in the longitudinal direction is 0.9 mm or more and 20 mm or less.

The present invention provides an optical modulator including a substrate and a phase modulation portion on the substrate. The phase modulation portion includes an optical waveguide comprised of a first clad layer, a semiconductor layer that is laminated on the first clad layer and has a refraction index higher than the first clad layer and a second clad layer that is laminated on the semiconductor layer and has a refraction index lower than the semiconductor layer, a first traveling wave electrode, and a second traveling wave electrode. The semiconductor layer includes a rib that is formed in the optical waveguide in an optical axis direction and is a core of the optical waveguide, a first slab that is formed in the optical axis direction in one side of the rib, a second slab that is formed in the optical axis direction in the other side of the rib, a third slab that is formed in the first slab in the optical axis direction at the opposite side to the rib, and a fourth slab that is formed in the second slab in the optical axis direction at the opposite side to the rib. The first slab is formed to be thinner than the rib and the third slab, and the second slab is formed to be thinner than the rib and the fourth slab.

An optical IQ modulator (IQM) including two parallel Mach-Zehnder modulators (MZM1, MZM2) generates single sideband data signals. A control unit (18) generates additional optical single sideband pilot signals (PS1, PS2) positioned in a lower and a higher sideband respectively, and also further pilot signals (PS3, PS4) in both sidebands. A IQ modulator output signal (MOS) converted into electrical monitoring signals (MOS) and monitored. A control unit (18) selects control signals (CS12, CS3, CS4) and controls the IQ modulator via its bias ports (6, 7, 8) till the power transfer functions (PTF) of the Mach-Zehnder modulators (MZM1, MZM2) and the phase difference (ΔΦ) between their output signals is optimized.

The substrate-type optical waveguide includes a rib-slab type core. A depletion layer exists in a rib part and, in any cross section of the core, a width of a first slab part is set to be greater than a width of a second slab part.

Remote measuring and sensing. Some example embodiment related to optical energy harvesting by identification device, such as infrared identification device GRID devices). Other embodiments relate to RFID device localization using low frequency source signals. Yet still other embodiments related to energy harvesting by RFID in electric fields in both conductive and non-conductive environments.

A monolithic PIC including a monolithic laser formed in/on a platform and a polymer modulator monolithically built onto the platform and optically coupled to the laser. The modulator includes a first cladding layer, a passive core region with a surface abutting a surface of the first cladding layer, the core region extending to define an input and an output for the modulator. A shaped electro-optic polymer active component has a surface abutting a surface of a central portion of the core region. The active component is polled to align dipoles and promote modulation of light and has a length that extends only within a modulation area defined by modulation electrodes. A second cladding layer encloses the active component and is designed to produce adiabatic transition of light waves traveling in the core region into the active component to travel the length thereof and return to the core region.

A frequency diverse distributed Mach-Zehnder Interferometer may include an optical modulator on a chip, with the modulator comprising a plurality of diodes arranged along a waveguide and with each diode driven by two or more drivers. An optical signal may be received in the waveguide, and a first modulating electrical signal may be applied to a first of the plurality of diodes using a first driver and a second modulating electrical signal may be applied to the first of the plurality of diodes using a second driver. The first electrical signal may be different from the second modulating electrical signal. The second electrical signal may have a larger voltage swing than the first electrical signal. The first electrical signal voltage swing may be 0.85 volts and the second electrical signal voltage swing may be 1.5 volts, for example. The first and second electrical signals may have different frequencies.

A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.

An ophthalmic imaging apparatus that captures a tomographic image of an subject's eye based on light obtained by combining a return light with a reference light, the return light being from the subject's eye when irradiated with a measurement light, the reference light corresponding to the measurement light includes a first optical fiber disposed in an optical path of the reference light and including a light guide portion for guiding the reference light, and a second optical fiber disposed in an optical path of the measurement light and including a light guide portion for guiding the measurement light, wherein a diameter of each of the light guide portions of ejection ends of the first optical fiber and the second optical fiber is larger than a diameter of a light guide portion in a position different from a position of each of the ejection ends.