G02F1/225

OPTICAL WAVEGUIDE DEVICE, MANUFACTURING METHOD OF OPTICAL MODULATION ELEMENT, OPTICAL MODULATOR, OPTICAL MODULATION MODULE, AND OPTICAL TRANSMISSION APPARATUS

There is provided an optical waveguide device including: a substrate; an optical waveguide formed on the substrate; and a working electrode that controls a light wave propagating through the optical waveguide, in which the working electrode includes a first base layer made of a first material, a first conductive layer on the first base layer, a second base layer made of a second material different from the first material, which is on the first conductive layer, and a second conductive layer on the second base layer, and an edge of the second base layer is covered with the second conductive layer, in a cross-section perpendicular to an extending direction of the optical waveguide.

Switchable fringe pattern illuminator

A switchable fringe pattern illuminator includes an optical path switch configured to receive light and dynamically control an amount of light that is provided to a first waveguide and an amount of light that is provided to a second waveguide. A first projector configured to generate a first fringe pattern using light from the first waveguide. The first fringe pattern illuminates a first portion of a target area. A second projector configured to generate a second fringe pattern using light from the second waveguide. The second fringe pattern illuminates a second portion of a target area. The illuminator may be part of a depth camera assembly (DCA). The DCA is configured to capture images of a portion of the target area. The DCA is further configured to determine depth information for an object in the target area based in part on the captured images.

Silicon thermal-optic phase shifter with improved optical performance

A thermo-optic phase shifter comprises an optical waveguide comprising a P-type region comprising a first contact, an N-type region comprising a second contact, and a waveguide region disposed between the P-type region and the N-type region and having a raised portion. The thermo-optic phase shifter further comprises one or more heating elements. The one or more heating elements include one or more discrete resistive heating elements or the P-type and N-type regions driven as resistive heating elements.

OPTICAL WAVEGUIDE
20220373853 · 2022-11-24 · ·

An optical waveguide, including a first structural layer, a second structural layer, a first light-guiding element, and multiple second light-guiding elements, is provided. The light-guiding elements are a partially penetrating and partially reflective layer. Multiple first sub-beams in an image beam are transmitted in the first or the second structural layer by a coupling inclined surface. Each first sub-beam forms multiple second sub-beams after being transmitted by the first or the second light-guiding elements. Some of the second sub-beams are coupled out of the optical waveguide by the second light-guiding elements, thereby enabling the image beam to expand in a first direction. For a portion of the visible light waveband, a trend of transmittance of the partially penetrating and partially reflective layer changing as a wavelength increases is opposite to a trend of transmittance of the first structural layer or the second structural layer changing as the wavelength increases.

OPTICAL WAVEGUIDE
20220373853 · 2022-11-24 · ·

An optical waveguide, including a first structural layer, a second structural layer, a first light-guiding element, and multiple second light-guiding elements, is provided. The light-guiding elements are a partially penetrating and partially reflective layer. Multiple first sub-beams in an image beam are transmitted in the first or the second structural layer by a coupling inclined surface. Each first sub-beam forms multiple second sub-beams after being transmitted by the first or the second light-guiding elements. Some of the second sub-beams are coupled out of the optical waveguide by the second light-guiding elements, thereby enabling the image beam to expand in a first direction. For a portion of the visible light waveband, a trend of transmittance of the partially penetrating and partially reflective layer changing as a wavelength increases is opposite to a trend of transmittance of the first structural layer or the second structural layer changing as the wavelength increases.

Optical resonator with localized ion-implanted voids

A high Q whispering gallery mode resonator with ion-implanted voids is described. A resonator device includes a resonator disk formed of an electrooptic material. The resonator disk includes a top surface, a bottom surface substantially parallel to the top surface, and a side structure between the top surface and the bottom surface. The side structure includes an axial surface along a perimeter of the resonator disk, where a midplane passes through the axial surface dividing the axial surface into symmetrical halves. The whispering gallery mode resonator disk includes voids localized at a particular depth from the top surface. At least one of the voids localized at the particular depth from the top surface is located at an outer extremity towards the perimeter of the resonator disk. The resonator device can further include a first electrode on the top surface and a second electrode on the bottom surface.

Spatially addressable nanovoided polymers

Examples include a device including a nanovoided polymer element having a first surface and a second surface, a first plurality of electrodes disposed on the first surface, a second plurality of electrodes disposed on the second surface, and a control circuit configured to apply an electrical potential between one or more of the first plurality of electrodes and one or more of the second plurality of electrodes to induce a physical deformation of the nanovoided polymer element.

Spatially addressable nanovoided polymers

Examples include a device including a nanovoided polymer element having a first surface and a second surface, a first plurality of electrodes disposed on the first surface, a second plurality of electrodes disposed on the second surface, and a control circuit configured to apply an electrical potential between one or more of the first plurality of electrodes and one or more of the second plurality of electrodes to induce a physical deformation of the nanovoided polymer element.

Method and apparatus for bias control with a large dynamic range for Mach-Zehnder modulators

Improved dither detection, measurement, and voltage bias adjustments for an electro-optical modulator are described. The electro-optical modulator generally includes RF electrodes and phase heaters interfaced with semi-conductor waveguides on the arms of Mach-Zehnder interferometers, where a processor is connected to output a bias tuning voltage to the electro-optical modulator for controlling optical modulation. A variable gain amplifier (VGA) can be configured with AC coupling connected to receive a signal from a transimpediance amplifier (TIA) that is configured to amply a photodetector signal from an optical tap that is used to measure an optical signal with a dither signal. The analog to digital converter (ADC) can be connected to receive output from the VGA. The processor can be connected to receive the signal from the ADC and to output the bias tuning voltage based on evaluation of the signal from the tap.

Optoelectronic computing systems

A system includes a first unit configured to generate a plurality of modulator control signals, and a processor unit. The processor unit includes: a light source or port configured to provide a plurality of light outputs, and a first set of optical modulators coupled to the light source or port and the first unit. The optical modulators in the first set are configured to generate an optical input vector by modulating the plurality of light outputs provided by the light source or port based on digital input values corresponding to a first set of modulator control signals in the plurality of modulator control signals, the optical input vector comprising a plurality of optical signals. The processor unit also includes a matrix multiplication unit that includes a second set of optical modulators. The matrix multiplication unit is coupled to the first unit, and is configured to transform the optical input vector into an analog output vector based on a plurality of digital weight values corresponding to a second set of modulator control signals in the plurality of modulator control signals applied to the second set of optical modulators. At least one optical modulator of at least one of the first set of optical modulators or the second set of optical modulators is configured to modulate an optical signal based on a first modulator control signal among the plurality of modulator control signals, and the first unit is configured to shape the first modulator control signal to include bandwidth-enhancement associated with a change in amplitude associated with a corresponding change in successive digital values corresponding to the first modulator control signal.