A programmable fiber-optic delay line simulates spatial distances for an environment sensor. The programmable fiber-optic delay line comprises: at least three optical transfer switches interconnected by a plurality of lengths of optical fiber, wherein the at least three optical transfer switches with the plurality of lengths of optical fiber are configured to provide a continuous delay line having a plurality of different selectable delay values, wherein the different delay values are selectable based on switch positions of the at least three optical transfer switches. A first terminal of a first optical transfer switch of the at least three optical transfer switches is connected to a third optical transfer switch of the at least three optical transfer switches, enabling bypassing of a second optical transfer switch of the at least three optical transfer switches.

The present invention discloses a TMOS based on slab PhCs with a high DOP and a large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is called as a first square-lattice slab PhC with a TE bandgap, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and a normalized operating frequency of the TMOS with high DOP and large extinction ratio is 0.252 to 0.267.

The present invention discloses a TEOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is a first square-lattice slab PhC, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, the first flat dielectric pillars include a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or 1 to 3 high-refractive-index flat films, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric; and an normalized operating frequency of the TEOS is 0.4057 to 0.406.

The present invention is based on a two-dimensional photonic crystal in which defects are inserted in a controlled manner, has the main function of division of the power of an input signal, excited in one of its six waveguides, among other three waveguides (output ones), while keeping isolation of the input port by means of two other waveguides. The operating principle of the device is based on the alignment of a dipole mode excited in the resonant cavity, in such a way that the nodes of this mode are oriented in the direction of two waveguides, so that these waveguides are not excited. Due to this alignment, each of the three output waveguides receive about one third of the power of input signal. The orientation of dipole mode is controlled by the applied DC magnetic field and the physical and geometrical parameters of the resonator.

The present invention is based on a two-dimensional photonic crystal in which defects are inserted in a controlled manner, has the main function of division of the power of an input signal, excited in one of its six waveguides, among other three waveguides (output ones), while keeping isolation of the input port by means of two other waveguides. The operating principle of the device is based on the alignment of a dipole mode excited in the resonant cavity, in such a way that the nodes of this mode are oriented in the direction of two waveguides, so that these waveguides are not excited. Due to this alignment, each of the three output waveguides receive about one third of the power of input signal. The orientation of dipole mode is controlled by the applied DC magnetic field and the physical and geometrical parameters of the resonator.

The present invention discloses a TMOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is called as a first square-lattice slab PhC, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, and the first flat dielectric pillars includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or of 1 to 3 high-refractive-index flat films, or of a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric and an normalized operating frequency of the TMOS is 0.4057 to 0.406.

The present invention discloses a TEOS based on slab PhCs with a high DOP and large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is a first square-lattice slab PhC with a TM bandgap and a complete bandgap, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square lattice slab PhC with a TM bandgap and complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and an normalized operating frequency of the TEOS is 0.453 to 0.458.

An optical switch has four optical ports; a first optical waveguide coupled between a first of said ports and a second of the ports; a first switch element provided between the first waveguide and a second optical waveguide that is coupled to a third of the ports; a second switch element provided between the first waveguide and a third optical waveguide that is coupled to a fourth of the ports. Each switch element has a micro-ring resonator having an active state in which it is coupled to the first waveguide and to a respective one of the second and third waveguides for optical signals at a preselected wavelength, and an inactive state in which no coupling occurs. Each switch element has a control element arranged to receive a respective control signal configured to cause it to switch the micro-ring resonator between said states.

An optical switch has four optical ports; a first optical waveguide coupled between a first of said ports and a second of the ports; a first switch element provided between the first waveguide and a second optical waveguide that is coupled to a third of the ports; a second switch element provided between the first waveguide and a third optical waveguide that is coupled to a fourth of the ports. Each switch element has a micro-ring resonator having an active state in which it is coupled to the first waveguide and to a respective one of the second and third waveguides for optical signals at a preselected wavelength, and an inactive state in which no coupling occurs. Each switch element has a control element arranged to receive a respective control signal configured to cause it to switch the micro-ring resonator between said states.

A fast optical switch can be fabricated/constructed, when vanadium dioxide (VO.sub.2) ultra thin-film or a cluster of vanadium dioxide particles (less than 0.5 microns in diameter) embedded in an ultra thin-film of a polymeric material or in a mesh of metal nanowires is activated by either an electrical pulse (a voltage pulse or a current pulse) or a light pulse just to induce rapid insulator-to-metal phase transition (IMT) in vanadium dioxide ultra thin-film or vanadium dioxide particles embedded in an ultra thin-film of a polymeric material or in a mesh of metal nanowires. The applications of such a fast optical switch for an on-Demand optical add-drop subsystem, integrating with or without a wavelength converter are also described.