Nonlinear on-chip optical devices using AlScN are described herein. In one aspect, an optical component having nonlinear characteristics can include a first substrate defining a refractive index; and a nonlinear layer, the nonlinear layer disposed on the first substrate, the nonlinear layer comprising an amount of scandium (Sc), and the nonlinear layer defining a refractive index that is higher than the refractive index of the first substrate.

In a high power optical system, a thermal waveguide including an optical material having an index of refraction sensitive to changes in temperature, the rectangular optical material having a first dimension and a second dimension in a horizontal plane and a third dimension in a vertical plane, the third dimension being approximately ten times smaller than the first and second dimension, at least one heat sink thermally coupled to the optical material to establish a one-dimensional thermal gradient across the third dimension of the optical material, the thermal gradient having a parabolic profile across the rectangular optical material, and wherein the optical material is configured to act as a waveguide when a laser beam having a power of greater than one watt is incident upon the optical material.

A display device includes a light source that includes a blue light-emitting diode (LED) configured to generate a blue output light; a nanocrystal material that is disposed between the light source and a liquid crystal module, and a light guide assembly. The nanocrystal material receives the blue output light, converts a first portion of the blue output light to a green light emission, converts a second portion of the blue output light to a red light emission, and transmits a remainder portion of the blue output light. The light guide assembly includes a planar light guide optically coupled to a light-receiving surface of the liquid crystal module and a curved light guide optically coupled to the planar light guide and configured to receive light from the light source and direct the light toward the planar light guide.

A quantum rod, a synthesis method of the quantum rod and a quantum rod display device are discussed. The quantum rod according to an embodiment includes a core, a first shell covering the core, and a second shell covering a side of the first shell. In the quantum rod, a first thickness of the first shell is greater than a second thickness of the second shell, and a first length of the first shell is smaller than a second length of the second shell.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.

An optical parametric device (OPD), which is selected from an optical parametric oscillator (OPO) or optical parametric generator (OPG), is configured with a nonlinear optical element (NOE) which converts an incoupled pump radiation at first frequency into output signal and idler radiations at one second frequency or different second frequencies, which is/are lower than the first frequency, by utilizing nonlinear interaction via a random quasi-phase matching process (RQPM-NOE). The NOE is made from a nonlinear optical material selected from optical ceramics, polycrystals, micro and nanocrystals, colloids of micro and nanocrystals, and composites of micro and nanocrystals in polymer or glassy matrices. The nonlinear optical material is prepared by modifying a microstructure of the initial sample of the NOE such that an average grain size is of the order of a coherence length of the three-wave interaction which enables the highest parametric gain achievable via the RQPM process.

Devices and/or methods provided herein relate to providing conversion of photons between an optical domain and a microwave domain. An electronic structure can comprise a resonator assembly comprising a microwave resonator and an optical resonator, an optical pump waveguide that transmits an optical pump input to the resonator assembly, and an optical signal waveguide, separate from the optical pump waveguide, that transmits an optical signal relative to the resonator assembly. The electronic structure further can comprise a microwave signal waveguide that transmits a microwave signal relative to the resonator assembly. The optical pump waveguide can comprise a delay portion that delays receipt of the optical pump input to the resonator assembly through the optical pump waveguide to a time after reduction of a majority of decoherence of the resonator assembly caused by scattering of a portion of the optical pump input, which portion does not enter the optical pump waveguide.

Methods and systems are described for conversion of an optical signal. The device may comprise a conversion layer comprising a nonlinear optical material with a surface structure disposed to receive a pump signal and cause a bound states in the continuum (BIC) optical mode. The conversion layer may be configured to convert, based on nonlinear interaction with the BIC optical mode, an incoming signal incident on the conversion layer from an incoming wavelength to a target wavelength.

Efficient harmonic light generation can be achieved with ultrathin films by coupling an incident pump wave to an epsilon-near-zero (ENZ) mode of the thin film. As an example, efficient third harmonic generation from an indium tin oxide nanofilm (/42 thick) on a glass substrate for a pump wavelength of 1.4 m was demonstrated. A conversion efficiency of 3.310.sup.6 was achieved by exploiting the field enhancement properties of the ENZ mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.