A miniaturized PPKTP crystal-based entanglement source system using multi-mode reception is provided, which includes a pump light source, a pump light transmission module, an entanglement device, a first collection device, and a second collection device. In the entanglement source system, entangled lights are received by using multi-mode optical fibers, and an entangled light processing scheme of combining a temporal filtering technology and a spatial filtering technology is applied into a collecting device at one side of the entanglement source system, to form asymmetric device structures in the entanglement source system, to enable multi-mode reception.

An exemplary system can be provided which can include, for example, a plurality of source arrangements configured to provide a plurality of electro-magnetic radiations to at least one of at least one sample or at least one reference structure, a first arrangement configured to receive a first radiation(s) from the reference structure(s), a second arrangement configured to receive a second radiation(s) from the sample(s), where a portion(s) of the second radiation(s) can be in an invisible spectrum, a third arrangement configured to combine the first radiation(s) and the second radiation(s) into a third radiation(s), and a fourth arrangement configured to convert the third radiation(s) into a further radiation in a visible spectrum based on the at least one portion.

An optical computation system includes a light source configured to produce a pump beam, an optical modulator configured to modulate the pump beam based on the modulation mask to generate a modulated beam, a non-linear medium configured to convert a portion of the modulated beam to a second harmonic (SH) beam and to produce an output including the SH beam and an unconverted portion of the pump beam, and a dichroic mirror configured to receive the output of the non-linear medium and to decouple the SH beam and the unconverted portion of the pump beam, a detector configured to detect a first optical power of the unconverted portion of the pump beam and to detect a second optical power of the SH beam, and a controller configured to generate an updated modulation mask based on the first and second optical powers for transmission to the optical modulator.

To perform poling treatment in a simple procedure by dry process. A magnetic field poling device includes a first holding part configured to hold a film-to-be-poled (2); a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled (2); and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.

A method of poling and calibrating electro-optic fibers is disclosed. Metal electrodes are used to utilize the electro-optic effect to impart phase delays to the optical signal. Moreover, one or more electrodes may be used for heating of the device to reach softening temperatures of the electro-optic material, which allows easy, effective and efficient poling of the electro-optic material. A method based on continuous or periodic optical feedback is used to automatically calibrate the electro-optic device when its performance degrades with time to relaxation of molecular orientations.

Terahertz spectrometer having a wider range of terahertz radiation source, high temporal resolution of scanning (<0.0.099 μm or ˜0.3 pico second) over a wider range of scanning (up to ˜100 pico seconds). Also disclosed are exemplary applications of the spectrometer in biomedical, biological, pharmaceutical, and security areas.

A method of poling an organic polymeric electro-optic material. The method includes doping the organic polymeric electro-optic material with nanoparticles. The method also includes heating the organic polymeric electro-optic material to a poling temperature. The method also includes poling the organic polymeric electro-optic material by applying an electric field across the organic polymeric electro-optic material.

A method of generating THz radiation includes the steps of generating optical input radiation with an input radiation source device (10), irradiating a first conversion crystal device (30) with the optical input radiation, wherein the first conversion crystal device (30) is arranged in a single pass configuration, and generating the THz radiation having a THz frequency in the first conversion crystal device (30) in response to the optical input radiation by an optical-to-THz-conversion process, wherein a multi-line frequency spectrum is provided by the optical input radiation in the first conversion crystal device (30), and the optical-to-THz-conversion process includes cascaded difference frequency generation using the multi-line frequency spectrum. Furthermore, a THz source apparatus being configured for generating THz radiation and applications thereof are described.

A wavelength conversion apparatus using a nonlinear optical medium having a periodically poled structure is operated at an optimal temperature in a stable manner. The wavelength conversion apparatus includes a wavelength converter using a nonlinear optical medium and a controller for controlling temperature of the wavelength converter. The wavelength conversion apparatus further includes a first optical branch coupler for branching part of output light from the wavelength converter, and first and second wavelength separation filters for separating and outputting, from part of the output light, each of two light components generated by parametric fluorescence in the wavelength converter. The controller controls the temperature of the wavelength converter on the basis of difference in light intensity of the two light components.

According to some aspects, a transmissive and all-dielectric optical component/limiter with great cutoff efficiency using Vanadium Dioxide (VO.sub.2) as the active component is disclosed. In some embodiments, Vanadium dioxide is used for an optical limiter due to the large contrast in optical constants upon undergoing the semiconductor to metal phase transition. When triggered optically, this transition occurs within 60 fs, making the device suitable for an ultrafast laser environment. In addition, the phase transition threshold is tunable by applying stress or doping; therefore, the device cutoff intensity can be adjusted to fulfill specific requirements.