The present invention relates to a device for generating laser radiation.

A problem addressed by the present invention is that of specifying a device for generating laser radiation using a nonlinear crystal, which device has a simple construction and low optical losses.

The device according to the invention comprises an optical amplifier having an active zone, wherein the optical amplifier has a front facet and a rear facet, between which the active zone extends; and a resonator having a first resonator element and a second resonator element, between which the optical amplifier extends, wherein the first resonator element is arranged on a side of the active zone facing away from the front facet and the second resonator element is arranged on a side of the active zone facing the front facet, and wherein the second resonator element comprises a nonlinear crystal having periodic poling.

A system for frequency conversion, comprises a laser source and a harmonic generation crystal. The laser source is configured to produce optical pulse energy of less than 100 μJ. The harmonic generation crystal comprises a structure characterized by a nonlinear susceptibility, and a crystal grating period which adiabatically varies along the longitudinal direction in a manner that the crystal grating period is inversely proportional to a crystal grating function of a coordinate z measured along the longitudinal direction.

The invention relates to a method for producing waveguides (201) from a material (202) of the KTP family comprising the following method steps: b) treating the material (202) in such a way that a periodic poling of the material (202) is achieved, c) treating the material (202) in a molten salt bath (309c), which contains rubidium ions, characterized in that the molten salt bath (309c) which contains rubidium ions in step c) satisfies the following boundary conditions: the mole fraction of rubidium nitrate (RbNO.sub.3) in the melt lies in the range of 86-90 mol % at the beginning of the treatment, the mole fraction of potassium nitrate (KNO.sub.3) in the melt lies in the range of 10-12 mol % at the beginning of the treatment, the mole fraction of barium nitrate (Ba(NO.sub.3).sub.2) in the melt lies in the range of 0.5-1 mol % at the beginning of the treatment, the temperature of the melt lies in the range of 357-363° C. during the treatment. Thus the problem is solved, when reversing the known method steps, of achieving substantially identical diffusion depths of the ions during the ion exchange in order to produce periodically poled waveguides as free of corrugation as possible.

A wavelength conversion element manufacturing method capable of realizing, in a wavelength conversion element having a structure in which a thin film substrate having a periodic polarization inversion structure and a support substrate are laminated, highly efficient wavelength conversion by confining light in a cross-sectional area smaller than in the known art. The manufacturing method includes steps of forming a periodic polarization inversion structure on a first substrate made of a second-order nonlinear optical crystal and forming a damage layer in the first substrate by implanting ions from one substrate surface to obtain a first substrate for bonding, directly bonding a second substrate having a bonding surface having a smaller refractive index than the first substrate to the one substrate surface of the first substrate at the bonding surface, and peeling the first substrate directly bonded to the second substrate being the support substrate with the damage layer as a boundary to remove a part of the first substrate.

A laser source includes a first laser device configured to generate a first laser beam having a first wavelength, a second laser device configured to generate a second laser beam having a second wavelength, which is different from the first wavelength, and a non-linear crystal configured to receive simultaneously the first and second laser beams and to generate a third laser beam that has a third wavelength, which is larger than each of the first and second wavelengths. The non-linear crystal has a length and a width, and a variable poling period is distributed across the width so that the third wavelength varies within a given wavelength range based on an incident position of the first and second laser beams along the width of the non-linear crystal.

The present disclosure relates to a broadband optical parametric chirped pulse amplifier insensitive to temperature comprises the first pulsed laser, the second pulsed laser, a pulse stretcher and a periodically poled nonlinear crystal. Via the proper arrangement of the non-collinear angles between the transmission directions of the signal light, the pump light and the idler light, to simultaneously satisfy the angular relationship required for constructing the non-collinear phase-matching configuration insensitive to wavelength and that required for constructing the non-collinear phase-matching configuration insensitive to temperature, the optical parametric chirped pulse amplifier not only can realize a broadband parametric amplification of the signal light (insensitive to wavelength), but also can effectively alleviate the phase mismatch in nonlinear crystal resulted from the excessively high local temperature (insensitive to temperature).

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

A cavity-enhanced frequency mixer includes an input optical fiber, a waveguide, and an output optical fiber. The waveguide has an input end and an output end, the input end is connected to the input optical fiber, and a surface of the input end of the waveguide is coated with a highly reflective coating. The output optical fiber is formed with a fiber Bragg grating structure. The highly reflective coating and the fiber Bragg grating structure form a pair of reflective surfaces for resonant optical parametric oscillation under a low threshold situation, so that one of the beams generated by the input beam is reflected inside the partially reflective surfaces. Operated above a pump power threshold, the cavity-enhanced frequency mixer is tantamount to a compact, low-power budget optical parametric oscillator, while below the pump power threshold, it is a bright, compact, single-mode and narrow linewidth single-photon source.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.