Bright entangled photon sources including an alignment-free, fiber-based, mechanically-rugged and generic interferometric module are disclosed. The inherent phase-stability of a Sagnac interferometer is deployed. High down-conversion efficiency of periodically poled nonlinear-waveguides is combined with the optical gain of semiconductor optical amplifiers and immunity of fiber optics. A single compact interferometric engine combines these attributes, allowing highly stable, integrable and bright polarization entangled-photon sources operating at room temperature. Using a minimum number of in-line optical parts, the compact module is based on a novel method that enhances the long-term stability and efficiency without compromising the entanglement quality. Besides energy entanglement, polarization entanglement is presented and set through the operational conditions. An optional periodically poled nonlinear waveguide can be hosted to achieve the desired spectral bandwidth and photons generation rate. The result is a zero-maintenance, lightweight, low-power consumption engine of compact and fully-integrable bright polarization-entangled photon sources.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H.sub.2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

An apparatus and method for wavelength conversion of a signal, for example, a dual-polarization signal, is disclosed. The apparatus implements a single-loop counter-propagating wavelength conversion scheme which provides both up-conversion and down-conversion of the signal within the same loop. Nonlinear wavelength conversion devices in the loop provide both up-conversion and down-conversion of the polarization components of the signal within the loop depending on whether the polarization component travels through the nonlinear conversion device in a clockwise or a counter-clockwise direction. The wavelength-converted signal is available to be extracted from the wavelength-conversion loop. An all-optical wavelength-division multiplexing transponder based on the wavelength-conversion scheme is also disclosed.

An optical element includes Strontium tetraborate SrB.sub.4O.sub.7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency converting stage of a laser assembly to generate laser output light having a wavelength in the range of 125 nm to 183 nm. One or more fundamental light beams having fundamental wavelengths between 1 and 1.1 μm are doubled and/or summed using multiple intermediate frequency conversion stages to generate one or more intermediate light beam frequencies (e.g., second through eighth harmonics, or sums thereof), and then the final frequency converting stage utilizes the optical element to either double a single intermediate light beam frequency or to sum two intermediate light beam frequencies to generate the desired laser output light at high power and photon energy levels. A method and inspection system incorporating the laser assembly is also described.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

Improved efficiency for nonlinear optical interactions is provided by using strongly confining waveguides for simultaneous imposition of dispersion design constraints at two or more dispersion orders. Quasi-phase-matching allows for phase-matching to be accomplished independently of the waveguide design, which helps provide sufficient design freedom for the dispersion design.

A method for fabricating an optical waveguide comprises: providing a sample of lithium niobate doped with magnesium oxide and having at least one grating of periodic domain inversion defined therein; applying a layer of metallic zinc to a surface of the sample over the at least one grating using sputter deposition; heating the sample in an atmosphere of pure oxygen to cause the zinc to indiffuse into the lithium niobate to form a waveguiding layer of increased refractive index under the surface of the sample; and using a dicing blade to cut two substantially parallel channels along a length direction of the at least one grating, to define a ridge waveguide between the two channels.

A wavelength conversion apparatus using a nonlinear optical medium having a periodically poled structure is operated at an optimal temperature in a stable manner. The wavelength conversion apparatus includes a wavelength converter using a nonlinear optical medium and a controller for controlling temperature of the wavelength converter. The wavelength conversion apparatus further includes a first optical branch coupler for branching part of output light from the wavelength converter, and first and second wavelength separation filters for separating and outputting, from part of the output light, each of two light components generated by parametric fluorescence in the wavelength converter. The controller controls the temperature of the wavelength converter on the basis of difference in light intensity of the two light components.