A terahertz scanning reflectometer system is described herein for in-situ measurement of polymer coating thickness, semiconductor wafer's surface sub-surface inspection in a non-destructive and non-invasive fashion with very high resolution (e.g., 25 nm or lower) and spectral profiling and imaging of surface and sub-surface of biological tissues (e.g., skin) in a non-invasive fashion.

A nonlinear optical dye includes a compound represented by the general formula (1) below. ##STR00001## In the above general formula (1), each of X.sup.1, X.sup.2, X.sup.3 and X.sup.4 independently represents a hydrogen atom, an alkyl group having a carbon number of 1 to 6, a halogen atom, a hydroxyl group, a nitro group, a cyano group, or a methylsulfonyl group. In the present invention, it is preferred that each of X.sup.1, X.sup.2, X.sup.3 and X.sup.4 independently represents a hydrogen atom, an alkyl group having a carbon number of 1 to 6, or a halogen atom. In the present invention, it is also preferred that the nonlinear optical dye has a dipole moment of 2.1 D or less and a maximum absorption wavelength within a range of 315 to 360 nm.

A compound for spacing nonlinear optical chromophores of the Formula I

##STR00001##

and the commercially acceptable salts, solvates and hydrates thereof, wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, W, X, Y, Z, Q.sup.1, Q.sup.2, Q.sup.4 and L have the definitions provided herein.

A method of fabricating a polycrystalline silicon thin film transistor device includes the following steps. A substrate is provided, and a buffer layer having dopants is formed on the substrate. An amorphous silicon layer is formed on the buffer layer having the dopants. A thermal process is performed to convert the amorphous silicon layer into a polycrystalline silicon layer by means of polycrystalization, and to simultaneously out-diffuse a portion of the dopants in the buffer layer into the polycrystalline silicon layer for adjusting a threshold voltage. The polycrystalline silicon layer is patterned to form an active layer. A gate insulating layer is formed on the active layer. A gate electrode is formed on the gate insulating layer. A source doped region and a drain doped region are formed in the active layer.

One aspect of the present disclosure is a method for selective surface functionalization using a single-photon source. The method for selective functionalization using a single-photon source includes: (a) adding a single-photon source to a solution containing a photosensitizer and a monomer; and (b) emitting a single photon from the single-photon source. One aspect of the present disclosure is a selectively functionalized single-photon source prepared by the method.

A display device includes: a first organic layer; display elements over the first organic layer in correspondence with the pixels; an inorganic layer sealing the display elements and the first organic layer; a second organic layer on a part of the inorganic layer; and a touch electrode on a surface of the inorganic layer and a surface of the second organic layer. The first organic layer has a rift in the peripheral area to surround the display area. The inorganic layer includes a concave part over the rift, and extends from the display area to the peripheral area continuously. The second organic layer is on the concave part of the inorganic layer. The surface of the second organic layer on which a touch electrode is put is contiguous to and is surrounded by the surface of the inorganic layer on the concave part.

A display device includes: a first organic layer; display elements over the first organic layer in correspondence with the pixels; an inorganic layer sealing the display elements and the first organic layer; a second organic layer on a part of the inorganic layer; and a touch electrode on a surface of the inorganic layer and a surface of the second organic layer. The first organic layer has a rift in the peripheral area to surround the display area. The inorganic layer includes a concave part over the rift, and extends from the display area to the peripheral area continuously. The second organic layer is on the concave part of the inorganic layer. The surface of the second organic layer on which a touch electrode is put is contiguous to and is surrounded by the surface of the inorganic layer on the concave part.

Crosslinked films having electro-optic activity, compositions and compounds for making the films, methods for making the films, and devices that include the films are disclosed.

A second-order nonlinear optical device, includes (i) an active layer and (ii) an electric field generator. The active layer includes a matrix material, and second-order nonlinear optical chromophores dispersed in the matrix material. Each chromophore has a conjugated system having at least a first nitrogen atom connected to a second nitrogen atom via a conjugated path and a positive charge localized on one of the nitrogen atoms. The chromophore is switchable between a first state in which the positive charge is localized on the first nitrogen atom and a second state in which the positive charge is localized on the second nitrogen atom, and under thermal equilibrium both states are populated. The electric field generator is for switching at least some of the chromophores from the first state to the second state or from the second state to the first state, or to reorient at least some of the chromophores.

A second-order nonlinear optical device, includes (i) an active layer and (ii) an electric field generator. The active layer includes a matrix material, and second-order nonlinear optical chromophores dispersed in the matrix material. Each chromophore has a conjugated system having at least a first nitrogen atom connected to a second nitrogen atom via a conjugated path and a positive charge localized on one of the nitrogen atoms. The chromophore is switchable between a first state in which the positive charge is localized on the first nitrogen atom and a second state in which the positive charge is localized on the second nitrogen atom, and under thermal equilibrium both states are populated. The electric field generator is for switching at least some of the chromophores from the first state to the second state or from the second state to the first state, or to reorient at least some of the chromophores.