Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

An electrochromic device can include a substrate, a transparent conductive oxide layer over the substrate, and a bus bar over the substrate. The bus bar can include silver and has a resistivity of at most 6.710.sup.6 *cm, an average adhesion strength to SiO.sub.2 of at least 3N based on 20 measurements, as determined by Method A of ASTM B905-00 (Reapproved 2010), or a classification of at least 4, as determined by Method B of ASTM B905-00 (Reapproved 2010). In another aspect a process of forming an electrochromic device can include forming a transparent conductive oxide layer over a substrate; forming a bus bar precursor over the substrate, wherein the precursor includes silver; and firing the precursor to form a bus bar. Firing can be performed such that the first bus bar is at a temperature of at least 390 C.

A display device may include the following elements: a first substrate; a first polarizer; a second substrate overlapping the first substrate and overlapping the first polarizer; and a polarization structure positioned inside the second substrate, comprising a first polarization layer, and comprising a second polarization layer. The first polarization layer may be narrower than the second substrate in a first direction and may be positioned farther from or closer to the first polarizer than the second polarization layer. The second polarization layer may be narrower than the second substrate in the first direction.

Methods of circumscribing defects in optical devices are described. A perimeter is formed about a defect by laser ablation, where the perimeter electrically isolates the defect. The perimeter does not have damage due to excess energy from the laser and thus does not create new electrical shorts.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

A display device includes a first translucent substrate, a second translucent substrate that is disposed on a display surface side while opposed to the first translucent substrate, and a first light reduction unit that reduces a transmission amount of visible light while overlapping a bright point defect portion in planar view in at least one of the first translucent substrate and the second translucent substrate. The first light reduction unit has a circular shape including a first region disposed in a center and a second region disposed around the first region, and transmittance to the visible light in the first region is higher than transmittance to the visible light in the second region.

A method for manufacturing a display panel is disclosed. The method includes: forming a color filter and a transparent conductive film on a surface of a first substrate, the color filter being interposed between the first substrate and the transparent conductive film; forming an electrostatic protective layer on the other surface of the first substrate; forming another transparent conductive film on a second substrate; forming a light-valve molecular layer between the first substrate and the second substrate; performing a defect inspection in the display panel; and irradiating a laser onto the electrostatic protective layer when a defect is found in the display panel, such that a carbonization structure is formed in the electrostatic protective layer at a position corresponding to the defect.