An illumination system of a microlithographic projection exposure apparatus comprises an optical integrator having a plurality of light entrance facets and a beam deflection array of reflective or transparent beam deflecting elements. Each beam deflecting element is configured to illuminate a spot on the optical integrator at a position that is variable by changing a deflection angle produced by the beam deflecting element. The illumination system further comprises a control unit which is configured to control the beam deflection elements in such a manner that a light pattern assembled from the spots on at least one of the light entrance facets is varied in response to an input command that a field dependency of the angular irradiance distribution in a mask plane shall be modified.

An optical component comprising a mirror array having a multiplicity of mirror elements, which each have at least one degree of freedom of displacement, and which are each connected to at least one actuator for displacement, has a multiplicity of local regulating devices for damping oscillations of the mirror elements, wherein each of the regulating devices in each case has at least one capacitive sensor having at least one moveable electrode and at least one electrode arranged rigidly relative to the carrying structure.

An optical imaging apparatus includes an optical element support sub-structure and an auxiliary support sub-structure. The optical element support sub-structure is configured to support an optical element and has a first temporary support interface arrangement. The optical element is configured to form part of a group of optical elements of the optical imaging apparatus configured to transfer, in an exposure process using exposure light, an image of a pattern of a mask onto a substrate. The auxiliary support sub-structure is configured to support an auxiliary component and has a second temporary support interface arrangement. The auxiliary component is configured to execute, during the exposure process, an auxiliary function of the exposure process other than transferring the image of the pattern onto the substrate.

An illumination device comprises a laser source, a beam expander, a micromirror array having a first control system, a fast steering mirror having a second control system, a diaphragm array, a microlens array, an illumination lens group, and a reflection mirror sequentially along the propagation direction of the laser beam. The first control system comprises a first computer controlling each micromirror on the micro-mirror array through the micromirror array controller to rotate in two-dimensional directions so expanded beam forms desired intensity patterns on the diaphragm array after reflected by the micromirror array and fast reflection mirror and a micromirror array controller; the second control system comprises a second computer controlling the reflection mirror of the fast steering mirror to rotate through fast steering mirror controller so created intensity pattern moves relative to the diaphragm array and a fast steering mirror controller. Method for using the illumination device is provided.

The invention relates to a method for compensating at least one defect of an optical system which includes introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.

An assembly for a projection exposure apparatus for EUV projection lithography has an illumination optical unit for guiding illumination light to an illumination field, in which a lithography mask can be arranged. The illumination optical unit comprises a first facet mirror, which comprises a plurality of mirror arrays with respectively a plurality of individual mirrors. The individual mirrors provide individual mirror illumination channels for guiding illumination light partial beams to the illumination field. The mirror arrays of the first facet mirror are arranged in an array superstructure. Gaps extend along at least one main direction (HRα) between neighboring ones of the mirror arrays. Furthermore, the illumination optical unit comprises a second facet mirror, which comprises a plurality of facets, which respectively contribute to imaging a group of the individual mirrors of the field facet mirror into the illumination field via a group mirror illumination channel.

An exposure apparatus may include a laser light source capable of varying a wavelength of a laser beam that is emitted from the laser light source, a mask on which a pattern is formed, the pattern being configured to generate diffracted light by being irradiated with the laser beam, and a controller configured to control, in accordance with a distance between the mask and a substrate, the wavelength of the laser beam that is emitted from the laser light source, wherein the mask is irradiated with the laser beam emitted from the laser light source to perform proximity exposure on a surface of the substrate.

A light irradiating device includes a processing chamber in which a substrate is accommodated; a beam source chamber in which a beam source of an energy beam is accommodated; a partition wall configured to partition the processing chamber and the beam source chamber; multiple window members provided at the partition wall to transmit the energy beam outputted from the beam source toward the substrate within the processing chamber; and multiple gas discharge units respectively disposed around the multiple window members within the processing chamber, and configured to discharge an inert gas along surfaces of the multiple window members.

A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of an alignment target comprising a periodic structure. An illumination optical system for focusing radiation into a spot on said structure. An asymmetry detection optical system receives a share of positive and negative orders of radiation diffracted by the periodic structure, and forms first and second images of said spot on first and second detectors respectively, wherein said negative order radiation is used to form the first image and said positive order radiation is used to form the second image. A processor for processing together signals from said first and second detectors representing intensities of said positive and negative orders to produce a measurement of asymmetry in the periodic structure. The asymmetry measurement can be used to improve accuracy of the position read by the alignment sensor.

Actuation systems and lithographic apparatus which address the issue of uncontrolled return of common mode currents are provided. In an embodiment such systems aim to prevent the occurrence of corona and discharge between high voltage electric cables in low pressure environments. An exemplary actuation system includes an actuator module, a power source and power transmission cables. The actuator module includes an electrical motor and a first plurality of shielded cables configured to connect to the electrical motor at one end. The actuator module is located in a low pressure environment and each shield of the first plurality of cables is grounded. The transmission cables electrically connect the first plurality of cables with power supply, and include an extra cable configured to connect each shield of the first plurality of cables with the first extra cable, via a choke so as to provide a return path for common-mode currents.