A method for generating EUV radiation is provided. The method includes generating a target droplet with a target droplet generator. The method further includes recording an image of the target droplet on a first image plane to detect a first position of the target droplet. The method also includes recording an image of the target droplet on a second image plane to detect a second position of the target droplet. In addition, the method includes projecting a laser pulse onto the target droplet when the target droplet is located on a focus plane. The method further includes adjusting at least one parameter of the target droplet generator according to the first position and the second position.

A method including: obtaining a resist process dose sensitivity value for a patterning process; applying the resist process dose sensitivity value to a stochastic model providing values of a stochastic variable as a function of resist process dose sensitivity to obtain a value of the stochastic variable; and designing or modifying a parameter of the patterning process based on the stochastic variable value.

Disclosed is a metrology sensor apparatus and associated method. The metrology sensor apparatus comprises an illumination system operable to illuminate a metrology mark on a substrate with illumination radiation having a first polarization state and an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark. The metrology mark comprises a main structure and changes, relative to the first polarization state, at least one of a polarization state of a first portion of the scattered radiation predominately resultant from scattering by the main structure and a polarization state of a second portion of radiation predominately resultant from scattering by one or more features other than the main structure, such that the polarization state of the first portion of the scattered radiation is different to the polarization state of the second portion of the scattered radiation. The metrology sensor apparatus further comprises an optical filtering system which filters out the second portion of the scattered radiation based on its polarization state.

A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

An illuminating device capable of stably illuminating an irradiated object such as a document while suppressing light loss with a simply structure is provided. An LED array and a reflective plate are disposed sandwiching a slit (St) through which light reflected by a document MS passes and a light-guiding member is disposed on the side of the LED array. The light-guiding member includes a direct emission unit disposed between an illumination range y centered on a document reading position and the LED array and an indirect emission unit disposed between the reflective plate and the LED array, a light incidence face of the direct emission unit and a light incidence face of the indirect emission unit are disposed at mutually different position around the LED array, and the LED array is disposed on a side of an interior angle formed by the light incidence faces.

A projection exposure apparatus (400) for semiconductor lithography contains at least one partial volume (4) that is closed off from the surroundings. The partial volume (4) contains a gas, from which a plasma can be produced. Conditioning elements (20, 21, 22, 23, 24, 25) for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

A light source module of a photo printer includes a first micro light source, a second micro light source, a rod lens array and a microlens. The first micro light source emits a first light beam. The second micro light source emits a second light beam. The rod lens array is arranged between the first micro light source, the second micro light source and a film paper. The microlens is arranged between the first micro light source, the second micro light source and the rod lens array. The microlens is used for converging the projection angles of the first light beams and the second light beam. The microlens has an optical axis. The second micro light source is arranged along the optical axis. The first micro light source is arranged beside a first side of the optical axis.

A light source module of a photo printer includes a first micro light source, a second micro light source, a rod lens array and a microlens. The first micro light source emits a first light beam. The second micro light source emits a second light beam. The rod lens array is arranged between the first micro light source, the second micro light source and a film paper. The microlens is arranged between the first micro light source, the second micro light source and the rod lens array. The microlens is used for converging the projection angles of the first light beams and the second light beam. The microlens has an optical axis. The second micro light source is arranged along the optical axis. The first micro light source is arranged beside a first side of the optical axis.

A reaction force diversion mechanism, a motor device and a photolithography machine are disclosed. The photolithography machine includes an illumination unit, a mask stage, a projection objective, a main baseplate, a wafer stage and a main carrier frame. The illumination unit and the mask stage are disposed above the main baseplate, and the main carrier frame is arranged above a ground base. Both of the wafer stage and the main baseplate are supported on the main carrier frame, and vibration dampers are deployed between the main carrier frame and the ground base. Reaction force diversion mechanisms are disposed between the wafer stage and the ground base and between the mask stage and the ground base. The reaction force diversion mechanisms can divert reaction forces generated from movement of the two motion stages onto the ground base while blocking vibration propagating from the ground base toward the motion stages.

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.