An encoder, which measures a relative moving amount of a second member relative to a first member, includes: a diffraction grating provided on the first member; a light-incident optical member causing a measuring light to come into a grating pattern surface of the diffraction grating substantially perpendicularly; a first reflecting member provided on the second member and reflecting a diffracted light generated from the diffraction grating; a first direction-changing member changing a direction of the diffracted light; a first photo-detector detecting an interference light generated by interference between a double diffracted light and other diffracted light than the double diffracted light or a reference light, the double diffracted light being generated, via diffraction of the diffracted light, from the diffraction grating; and a measuring section which obtains the relative moving amount of the second member relative to the first member by using a detection signal from the first photo-detector.

A lithographic apparatus includes a sensor, such as an alignment sensor including a self-referencing interferometer, configured to determine the position of an alignment target including a periodic structure. An illumination optical system focuses radiation of different colors and polarizations into a spot which scans the structure. Multiple position-dependent signals are detected and processed to obtain multiple candidate position measurements. Asymmetry of the structure is calculated by comparing the multiple position-dependent signals. The asymmetry measurement is used to improve accuracy of the position read by the sensor. Additional information on asymmetry may be obtained by an asymmetry sensor receiving a share of positive and negative orders of radiation diffracted by the periodic structure to produce a measurement of asymmetry in the periodic structure.

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask in a projection exposure apparatus includes using an anamorphic projection lens

A liquid immersion member including first and second members forming the immersion space; first member having a first lower surface disposed at a portion of the optical member surrounding, second member having a second upper surface opposite to the first lower surface via a gap and a second lower surface opposing the substrate and second member disposed at a portion of exposure light optical path surrounding; driving apparatus to move the second member with respect to the first; controlling the driving apparatus so the second member's operation in the substrate first operation movement is between exposure termination and start of a first and second shot regions differently from a second member's operation in the substrate second movement period which is between exposure termination and start of a third and fourth shot regions; first and second shot regions are in the same row contrary to third and fourth shot regions.

A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.

A product structure (407, 330) is formed with defects (360-366). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure (604) to capture at least one diffraction pattern (606) formed by the radiation after scattering by the product structure. Reference data (612) describes a nominal product structure. At least one synthetic image (616) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects (660-666) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S(1)-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.

An illumination optical apparatus includes a plurality of birefringent members made of a birefringent material and arranged in an optical path on an incidence side of an optical integrator. The members change a polarization state of illumination light such that first and second rays of the illumination light are polarized in different directions on the pupil plane. The birefringent members are arranged such that an optical path length of the first ray in the birefringent material is different from an optical path length of the second ray in the birefringent material, and are arranged so as to change the polarization state of the illumination light incident on the plurality of the birefringent members in a linear polarization state having a substantially single polarization direction such that each of the first and second rays is polarized in a substantially circumferential direction about the optical axis on the pupil plane.

A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.

The present invention includes generating illumination, providing a spatial light modulator (SLM) configured to selectably illuminate one or more portions of a surface of a wafer using the generated illumination, receiving a sets of wafer pattern data indicative of one or more patterns of the wafer, translating the wafer along a direction, selectably controlling a pixel configuration of the SLM to control an illumination pattern on the surface of the wafer, a first pixel configuration illuminating a first set of regions of the wafer at an illumination level, an additional pixel configuration illuminating an additional set of regions at an additional illumination level, wherein a pixel pattern of the SLM based on the received sets of wafer pattern data is configured to move across a surface of the SLM synchronously with the pattern of the translated wafer, and detecting illumination from the surface of the wafer.