A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.

A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.

The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) to determining the positions of the plurality of pixels based on the error data and the first parameters.

The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) to determining the positions of the plurality of pixels based on the error data and the first parameters.

A mask blank including a phase shift film is provided, wherein the phase shift film has a transmittance with respect to exposure light of an ArF excimer laser of not less than 10% and not more than 20% and is configured to transmit the exposure light to have a phase difference of not less than 150 degrees and not more than 190 degrees with respect to exposure light transmitted through the air for the same distance as a thickness of the phase shift film. A ratio of the metal content to the total content of the metal and silicon in the phase shift film is not less than 5% and not more than 10%, the oxygen content in the phase shift film is 10 atom % or more, and the silicon content in the phase shift film is three times or more the oxygen content.

A mask blank including a phase shift film is provided, wherein the phase shift film has a transmittance with respect to exposure light of an ArF excimer laser of not less than 10% and not more than 20% and is configured to transmit the exposure light to have a phase difference of not less than 150 degrees and not more than 190 degrees with respect to exposure light transmitted through the air for the same distance as a thickness of the phase shift film. A ratio of the metal content to the total content of the metal and silicon in the phase shift film is not less than 5% and not more than 10%, the oxygen content in the phase shift film is 10 atom % or more, and the silicon content in the phase shift film is three times or more the oxygen content.

A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest.

Methods and systems for photomask defect dispositioning are provided. One method includes directing energy to a photomask and detecting energy from the photomask. The photornask is configured for use at one or more extreme ultraviolet wavelengths of light. The method also includes detecting defects on the photomask based on the detected energy. In addition, the method includes generating charged particle beam images of the photomask at locations of the detected defects. The method further includes dispositioning the detected defects based on the charged particle beam images generated for the detected defects.

Methods and systems for photomask defect dispositioning are provided. One method includes directing energy to a photomask and detecting energy from the photomask. The photornask is configured for use at one or more extreme ultraviolet wavelengths of light. The method also includes detecting defects on the photomask based on the detected energy. In addition, the method includes generating charged particle beam images of the photomask at locations of the detected defects. The method further includes dispositioning the detected defects based on the charged particle beam images generated for the detected defects.

The present disclosure relates to a method of using an equipment for manufacturing or using a mask or a display substrate; and the method includes: providing a master plate; setting, on the master plate, a plurality of measuring points corresponding to positions of the mask or the display substrate where a pixel position accuracy measurement is to be implemented, according to the mask or the display substrate to be measured; and placing the master plate in a coordinate system of the equipment, and measuring error values between the equipment and the master plate at the measuring points.