Methods of fabricating lithographic masks include performing mask process correction (MPC) on a mask tape out (MTO) design layout. Performing MPC may include identifying a plurality of unit cells (each being iterated in the MTO design layout and including a plurality of curve patterns), and performing model-based MPC on at least one of the plurality of unit cells. These methods may further include performing electron beam exposure based on the MTO design layout on which the MPC is performed. The performing model-based MPC on at least one of the plurality of unit cells may be based on at least one of an aspect ratio, sizes, curvatures of curved edges, density, and a duty of the plurality of curve patterns.

A method of fabricating a circuit element, such as a quantum computing circuit element, including obtaining a lithography mask write file that includes mask information characterizing one or more mask features, obtaining a uniformity function that is configured to modify the mask information to compensate for a non-uniform deposition process, applying the uniformity function to the lithography mask write to obtain a modified lithography mask write file, and performing lithography as directed by the modified lithography mask write file.

Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose is calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.

A method of fabricating a circuit element, such as a quantum computing circuit element, including obtaining a lithography mask write file that includes mask information characterizing one or more mask features, obtaining a uniformity function that is configured to modify the mask information to compensate for a non-uniform deposition process, applying the uniformity function to the lithography mask write to obtain a modified lithography mask write file, and performing lithography as directed by the modified lithography mask write file.

A method of operating a semiconductor apparatus includes forming a first electron beam passing through a first shaping aperture; modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region; and exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.

A method of operating a semiconductor apparatus includes forming a first electron beam passing through a first shaping aperture; modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region; and exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.

The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.

The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.

In some aspects, an integrated model accounts for effects from both the mask fabrication process and the wafer lithography process. The aerial image incident on the wafer, the pattern printed on the wafer, and/or measures of the foregoing are estimated using an integrated three-dimensional mask (M3D) model, as follows. The shapes in the mask fabrication description are partitioned into feature images. Each feature image is convolved with a corresponding M3D filter. The M3D filter represents an electromagnetic scattering effect of that feature image in the wafer lithography process, and the feature image and/or M3D filter account for effects on the layout geometry from the mask fabrication process. This is done without estimating the mask pattern printed on the lithographic mask. The mask fabrication description is modified based on differences between the estimated lithography results and corresponding target results.

A method for obtaining exposure data may be provided. MTO (Mask Tape Out) design data for a mask pattern may be received. A mask data preparation operation with respect to the MTO design data may be performed to obtain exposure data. Two-dimensional contours of a plurality of types of test patterns in an exposure mask may be extracted through simulation using a mask process model. First critical dimensions may be measured at measurement points of the contour of each of the plurality of types of test patterns by using a metrology algorithm. The first critical dimensions may be averaged to obtain a first average critical dimension for each of the plurality of types of test patterns. Second critical dimensions in consideration of dispersion in each of the plurality of types of test patterns may be measured using an inverse function of a standard normal distribution, and the second critical dimensions may be averaged to obtain a second average critical dimension for each of the plurality of types of test patterns. A mean to target (MTT) value may be calculated as a difference between the second average critical dimension and a target critical dimension for each of the plurality of types of test patterns. Differences between ones of the MTT values may be calculated. When one or more of the differences between the ones of the MTT values may is outside of a tolerance threshold, the exposure data may be corrected.