A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

A pre-classification of potential mask defects on the basis of machine learning is provided during the inspection of a mask for EUV lithography.

A pattern inspection apparatus includes an illumination optical system to illuminate an inspection substrate on which a pattern is formed, an offset calculation circuit to calculate an offset amount which depends on an image accumulation time of each of a plurality of photo sensor elements arrayed two-dimensionally, a time delay integration (TDI) sensor to include the plurality of photo sensor elements, to acquire an image of the inspection substrate by receiving a transmitted light or a reflected light from the inspection substrate by the plurality of photo sensor elements, to correct, using the offset amount, a pixel value of optical image data of an acquired image, and to output the optical image data having been corrected, and a comparison circuit to compare an optical image formed by the optical image data output from the TDI sensor with a reference image.

The invention relates to an optical system and, in particular for characterizing a microlithography mask, comprising a light source for generating light of a wavelength of less than 30 nm, an illumination beam path leading from the light source to an object plane, an imaging beam path leading from the object plane to an image plane and a beam splitter, via which both the illumination beam path and the imaging beam path run.

A photolithography exposure of a photoresist coating on a semiconductor wafer uses an optical projection system to form a latent image. The photolithography exposure further uses a mask with a set of multiple pattern focus (MPF) marks. Each MPF mark of includes features having different critical dimension (CD) sizes. The latent image is developed to form a developed photoresist pattern. Dimension sizes are measured of features of the developed photoresist pattern corresponding to the features of the MPF marks having different CD sizes. A spatial focus map of the photolithography exposure is constructed based on the measured dimension sizes. To determine the focal distance at an MPF mark, ratios or differences may be determined between the measured dimension sizes corresponding to the features of the MPF marks having different CD sizes, and the focal distance at the location of the MFP mark constructed based on the determined ratios or differences.

A photolithography exposure of a photoresist coating on a semiconductor wafer uses an optical projection system to form a latent image. The photolithography exposure further uses a mask with a set of multiple pattern focus (MPF) marks. Each MPF mark of includes features having different critical dimension (CD) sizes. The latent image is developed to form a developed photoresist pattern. Dimension sizes are measured of features of the developed photoresist pattern corresponding to the features of the MPF marks having different CD sizes. A spatial focus map of the photolithography exposure is constructed based on the measured dimension sizes. To determine the focal distance at an MPF mark, ratios or differences may be determined between the measured dimension sizes corresponding to the features of the MPF marks having different CD sizes, and the focal distance at the location of the MFP mark constructed based on the determined ratios or differences.

An inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to inspect the photomask; a mirror configured to direct a first radiation beam from the radiation source to the photomask at a first tilt angle; an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop; and a detector configured to generate an image of the photomask according to the second radiation beam.

Disclosed is a method of treating a substrate, the method including: supplying a liquid to the substrate, emitting a laser to the substrate supplied with the liquid to heat the substrate, and emitting imaging light for capturing the substrate to obtain an image of the substrate including a region to which the laser is emitted, in which the laser and the imaging light are emitted to the substrate through a head lens, and a divergence angle of the laser emitted from the head lens and a divergence angle of the imaging light are matched with each other.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit configured to rotate and support a substrate; a liquid supply unit configured to supply a liquid to the substrate supported on the support unit; and an optical module for heating the substrate supported on the support unit, and wherein the support unit includes a teaching member having a grid displaying a reference point which matches a center of the support unit.