A sol of inorganic oxide particles is stably dispersed in a hydrophilic organic solvent containing a hydrocarbon such as a paraffinic hydrocarbon or a naphthenic hydrocarbon. The sol contains a dispersion medium containing an organic solvent containing a C.sub.6-18 paraffinic hydrocarbon, a C.sub.6-18 naphthenic hydrocarbon, or a mixture of these, a C.sub.4-8 alcohol having a carbon chain with a carbon-carbon bond in the molecule in an amount of 0.1 to 5% by mass in the entire dispersion medium, and inorganic oxide particles having an average particle diameter of 5 to 200 nm as measured by dynamic light scattering as a dispersoid, wherein the inorganic oxide particles contain a C.sub.1-3 alkyl group bonded to a silicon atom and a C.sub.4-18 alkyl group. The paraffinic hydrocarbon is a normal paraffinic hydrocarbon or an isoparaffinic hydrocarbon. The naphthenic hydrocarbon is a saturated aliphatic cyclic hydrocarbon substitutable with a C.sub.1-10 alkyl group.

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

An organotin precursor solution is described comprising an organic solvent, an optional additive, and an organotin composition represented by one or more organotin compounds represented by the formula RSnL.sub.3, wherein each R is independently a hydrocarbyl ligand having from 1 to 31 carbon atoms and each L is independently a hydrolysable ligand, wherein the total concentration of Sn is from about 0.001 M to about 0.5 M. The solvent can comprises a linear alcohol with from 1 to 6 carbon atoms, and the organotin precursor solution can have an initial water content from about 100 ppm to about 10,000 ppm, in which the organotin precursor solution has a reduced rate of water dissipation relative to an equivalent organotin precursor solution formed with 4-methyl-2-pentanol. The organotin precursor solutions can be prepared through the selection of an appropriate stabilizing compound, which can be a linear, short chain alcohol and an appropriate additive.

A method of processing a substrate that includes forming over the substrate an extreme ultraviolet (EUV)-active photoresist film including a network of metal oxide terminated with alkoxy groups and patterning the EUV-active photoresist film with EUV lithography.

Photoreduction of graphene oxide, by UV-generated ketyl radicals, to graphene. The photoreduction is versatile and can be carried out in solution, solid-state, and even in polymer composites. Reduction of graphene oxide can take place in various polymer matrixes. Methods for producing graphene-supported metal nanoparticles by photoreduction. Graphene oxide and a metal nanoparticle precursor are simultaneously reduced by the action of photogenerated ketyl radicals. Photoreduction is performed on polymer composite films in one embodiment.

The present disclosure relates to LDS materials comprising a first coating layer comprising a first LDS additive, and a base substrate, wherein the coating layer contacts the base substrate. Articles formed from the LDS materials are also disclosed that include a conductive path and a metal layer deposited on the activated path. Methods for making the LDS materials and corresponding articles are also described.

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.

The present invention relates to a laser-imageable composition comprising an oxyanion of a multivalent metal and an oligomer, wherein the oxyanion of a multivalent metal comprises particles having a D.sub.50 particle size distribution of 10 μm or less. A method of formulation of the laser-imageable composition and a substrate comprising the laser-imageable composition applied thereto are also disclosed.

Disclosed herein are methods and apparatuses for exposing an organic metal-oxide film to a blanket UV treatment prior to a lithographic patterning operation. A blanket UV treatment may be used to shift a solubility curve of the film, such that a lower EUV dose may be used to pattern the film. Additionally, a blanket UV treatment may be used after development to further cure the film.