Embodiments disclosed herein include a method of forming a metal-oxo photoresist on a substrate. In an embodiment, the method comprises repeating a deposition cycle, where each iteration of the deposition cycle comprises: a) flowing a metal precursor into a chamber comprising the substrate; and b) flowing an oxidant into the chamber, where the oxidant and the metal precursor react to form the metal-oxo photoresist.

The present disclosure relates to novel negative- working and novel positive-working photoresist compositions for high speed, fine line processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays, electron beam and other charged particle rays. The novel photoresists contain specific metals components which are added to positive and negative photoresist compositions which are themselves composed of conventional photoresist materials.

The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

IR-sensitive lithographic printing plate precursors provide a stable print-out image using a unique IR radiation-sensitive composition. This IR radiation-sensitive composition includes: a) free radically polymerizable component; an b) IR radiation absorber; c) an initiator composition; a d) borate compound; and a e) compound capable of forming a colored boronic complex during or after exposure of the infrared radiation-sensitive image-recording layer to infrared radiation. The resulting print-out image exhibits an excellent color contrast between the exposed and non-exposed regions. After IR imaging, these precursors can be developed off-press or on-press.

A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF.sub.3, —SH, —OH, ═O, —S—, —P—, —PO.sub.2, —C(═O)SH, —C(═O)OH, —C(═O)O—, —O—, —N—, —C(═O)NH, —SO.sub.2OH, —SO.sub.2SH, —SOH, or —SO.sub.2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.

An actinic ray-sensitive or radiation-sensitive composition, and an actinic ray-sensitive or radiation-sensitive composition obtained by the method for producing an actinic ray-sensitive or radiation-sensitive composition each contain a cation having a metal atom, and a ligand, in which a value of σ represented by Equation (1) is 2.2 or less. A pattern forming method and the method for manufacturing an electronic device each use the actinic ray-sensitive or radiation-sensitive composition. $\begin{array}{cc}\sigma =\sqrt{\underset{k=1}{\overset{N}{.Math.}}\left\{{\left(\mu -X_k\right)}^2\times y_k\right\}}& \left(1\right)\end{array}$

Photoresist compositions may include a metal structure, a radical quencher including a phenolic compound, a photobase generator, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed on a lower film using the photoresist composition. A first area, which is a portion of the photoresist film, is exposed to form a metal network from the metal structure in the first area of the photoresist film, a base is generated from the photobase generator in the first area of the photoresist film, and the radical quencher is deactivated using the base in the first area of the photoresist film. The photoresist film is developed to form a photoresist pattern including the first area. The lower film is processed using the photoresist pattern.

A photoresist composition includes a photoresist material including metal oxide nanoparticles and a ligand, and an acid having an acid dissociation constant, pKa, of −15<pKa<4, or a base having a pKa of 40>pKa>9.

A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the protective layer and the photoresist layer to actinic radiation. The protective layer and the photoresist layer are developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having pendant fluorocarbon groups and pendant acid leaving groups.