A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

[Problem] To provide a thin film transistor substrate comprising a protective film, which can impart high driving stability.

[Means for Solution] A thin film transistor substrate comprising a thin film transistor and a protective film comprising a cured product of a siloxane composition, covering said thin film transistor, wherein the thin film transistor has a semiconductor layer made of an oxide semiconductor, and wherein the siloxane composition comprises polysiloxane, a fluorine-containing compound, and a solvent.

[Problem] To provide a thin film transistor substrate comprising a protective film, which can impart high driving stability.

[Means for Solution] A thin film transistor substrate comprising a thin film transistor and a protective film comprising a cured product of a siloxane composition, covering said thin film transistor, wherein the thin film transistor has a semiconductor layer made of an oxide semiconductor, and wherein the siloxane composition comprises polysiloxane, a fluorine-containing compound, and a solvent.

A photosensitive composition comprising a polymer compound composed of a repeating unit represented by the following formula (1) and at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (2), a repeating unit represented by the following formula (3) and a repeating unit represented by the following formula (4), and a compound having at least two azide groups:

##STR00001##

In the formula (1), Ar.sup.1 represents a phenyl group or a naphthyl group, and in the formula (2), Ar.sup.2 represents a phenyl group or a naphthyl group. l, m, n1 and n2 are numbers satisfying l15 and m+n1+n2=100-l, and 1+n210 when the total amount of all repeating units contained in the above-described polymer compound is taken as 100.

A photosensitive composition comprising a polymer compound composed of a repeating unit represented by the following formula (1) and at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (2), a repeating unit represented by the following formula (3) and a repeating unit represented by the following formula (4), and a compound having at least two azide groups:

##STR00001##

In the formula (1), Ar.sup.1 represents a phenyl group or a naphthyl group, and in the formula (2), Ar.sup.2 represents a phenyl group or a naphthyl group. l, m, n1 and n2 are numbers satisfying l15 and m+n1+n2=100-l, and 1+n210 when the total amount of all repeating units contained in the above-described polymer compound is taken as 100.

To provide a photosensitive composition excellent in a patterning property and capable of producing an organic thin-film transistor exhibiting high carrier mobility by being used in an insulation layer. A photosensitive composition comprising a polymer compound containing at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (2) and a compound having at least two azide groups:

##STR00001##

In the formula (1), Ar.sup.1 represents a phenyl group or a naphthyl group, and in the formula (2), Ar.sup.2 represents a phenyl group or a naphthyl group. l and m are numbers satisfying that 115 and l+m>90 when the total amount of all repeating units contained in the above-described polymer compound is taken as 100.

To provide a photosensitive composition excellent in a patterning property and capable of producing an organic thin-film transistor exhibiting high carrier mobility by being used in an insulation layer. A photosensitive composition comprising a polymer compound containing at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (2) and a compound having at least two azide groups:

##STR00001##

In the formula (1), Ar.sup.1 represents a phenyl group or a naphthyl group, and in the formula (2), Ar.sup.2 represents a phenyl group or a naphthyl group. l and m are numbers satisfying that 115 and l+m>90 when the total amount of all repeating units contained in the above-described polymer compound is taken as 100.

A curable composition and a permanent resist film made using this curable composition are provided. The composition dissolves well in solvents, gives coatings superior in alkali developability, thermal decomposition resistance, light sensitivity, and resolution, and is particularly suitable for the formation of permanent resist films. Specifically, the composition is a curable composition for permanent resist films and contains a phenolic hydroxyl-containing compound (A) that has a molecular structure represented by structural formula (1): ##STR00001##
(where R.sup.1 is hydrogen, alkyl, or aryl, and n is an integer of 2 to 10; R.sup.2 is alkyl, alkoxy, aryl, aralkyl, or halogen, and m is an integer of 0 to 4; if m is 2 or more, the plurality of R.sup.2s may be the same or different from one another, and may be bonded to either of the two aromatic rings in the naphthylene structure) and a photosensitizer (B1) or curing agent (B2).

To provide a heat-sensitive recording material which produces images with excellent resistance to water, while producing background with resistance to heat. A heat-sensitive recording material which is characterized by containing at least one compound represented by general formula (1) as a color-developing compound:

##STR00001##

wherein, R1-R5 each independently represents a hydrogen atom, a halogen atom, a nitro group, an amino group, an alkyl group, an alkoxy group, an aryloxy group, an alkylcarbonyloxy group, an arylcarbonyloxy group, an alkylcarbonylamino group, an arylcarbonylamino group, an alkylsulfonylamino group, an arylsulfonylamino group, a monoalkylamino group, a dialkylamino group or an arylamino group.

According to several embodiments, a composition of matter includes: a three-dimensional structure comprising photo polymerized molecules. At least some of the photo polymerized molecules further comprise one or more protected click-chemistry compatible functional groups; and at least portions of one or more surfaces of the three-dimensional structure are functionalized with one or more of the protected click-chemistry compatible functional groups.