The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises a nonpolar organic solvent, thereby suppressing the reactivity of the epoxy group in the composition to reduce the production of diol compounds. When a cured film is prepared from the composition, an appropriate level of developability can be maintained to further enhance the pattern adhesiveness, resolution, and sensitivity. Further, since the composition of the present invention has a small difference in the film retention rates at room temperature and low temperatures, the composition may have stable stability over time.

Provided is a compound that can be used as a base resin for a photosensitive resin composition. The photosensitive resin can form a fine pattern and can achieve high resolution without impairing mechanical strength and solubility. The compound is represented by the general formula (1): ##STR00001##
wherein Z represents a linear, branched or cyclic divalent hydrocarbon group having 2 to 30 carbon atoms; X.sup.1 to X.sup.3 represent any of —CO.sub.2—, —CONR.sup.X1—, —O—, —NR.sup.X1—, —S—, —SO.sub.2—, —SO.sub.3— and —SO.sub.2NR.sup.X1— and may be the same as or different from each other, provided that R.sup.X1 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms; Ar represents a divalent aromatic group having 2 to 30 carbon atoms; L.sup.1 and L.sup.2 independently represent a divalent hydrocarbon group having 1 to 30 carbon atoms; and x and y are each independently 0 or 1.

To provide a resist material that can form a film with high smoothness and uniformity and has high patterning performance, such as resolution, a resist material is provided that contains a calixarene compound (A) with a molecular structure represented by the following structural formula (1) and a resin component (B); ##STR00001##
wherein R.sup.1 denotes a perfluoroalkyl group or a structural moiety with a perfluoroalkyl group; R.sup.2 denotes a hydrogen atom, a polar group, a polymerizable group, or a structural moiety with a polar group or a polymerizable group; R.sup.3 denotes a hydrogen atom, an aliphatic hydrocarbon group that optionally has a substituent, or an aryl group that optionally has a substituent; n denotes an integer in the range of 2 to 10; and * denotes a bonding point with an aromatic ring.

A photosensitive resin composition includes a siloxane resin (A), particles (B) having a median diameter of 0.2 to 0.6 μm, and a naphthoquinone diazide compound (C), wherein the siloxane resin (A) contains at least 20 to 60 mol % in total of a repeating unit represented by general formula (1):

##STR00001##

wherein R.sup.1 represents an aryl group having 6 to 18 carbon atoms or an aryl group having 6 to 18 carbon atoms in which all or part of hydrogen is substituted.

Disclosed herein is a photosensitive composition comprising a DNQ-PAC, a heterocyclic thiol compound or tautomeric form thereof, an acrylate polymer, a Novolak and a PAG and its method of use on a substrate which may include a chalcophile substrate.

The present invention provides a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition includes a mixture of two or more siloxane polymers having different dissolution rates with respect to an aqueous solution of tetramethylammonium hydroxide. The composition keeps high transparency and high sensitivity, which are advantages of a composition containing a siloxane polymer, and has excellent chemical resistance, thereby providing a cured film having excellent stability in a post-processing.

A photosensitive resin composition including a polyamide-imide resin having a specific structure, a film comprising a cured product of the photosensitive resin composition, a method for preparing the film and a method for forming a resist pattern using the photosensitive resin composition.

A positive photosensitive resin composition includes a polymer resin, a quinonediazide compound, and a solvent. The polymer resin includes (i) 5 to 95 wt. % of a polyimide precursor having a structural unit represented by Formula 1, ii) 5 to 95 wt. % of a polyimide precursor having a structural unit represented by Formula 2, and iii) 0 to 20 wt. % of a polyimide precursor having a structural unit represented by Formula 3. The quinonediazide compound is included in an amount of 5 to 50 parts by weight per 100 parts by weight of the polymer resin. The solvent is included in an amount of 100 to 2,000 parts by weight per 100 parts by weight of the polymer resin.

A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.