Imide-linked polymeric photoinitiators and compositions useful in the preparation of such polymeric photoinitiators and to the use of these polymers in, e.g., UV curable adhesives, UV curable coating compositions and UV curable encapsulants.

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

A photocurable composition includes a nanomaterial selected to emit radiation in a first wavelength band in the visible light range in response to absorption of radiation in a second wavelength band in the UV or visible light range. The second wavelength band is different than the first wavelength band. The photocurable composition further includes one or more (meth)acrylate monomers, a thiol crosslinker, and a photoinitiator that initiates polymerization of the one or more (meth)acrylate monomers in response to absorption of radiation in the second wavelength band. A light-emitting device includes a plurality of light-emitting diodes and the cured photocurable composition in contact with a surface through which radiation in a first wavelength band in the UV or visible light range is emitted from each of the light-emitting diodes

A photocurable resin composition for forming an optically clear film. The photocurable resin composition includes a polyfunctional thiol monomer comprising 2 thiol functional groups, a polyfunctional (meth)acrylate monomer comprising 2 (meth)acryloyl functional groups, a photo-initiator present in a concentration of about 1 parts per hundred (phr) or less, a sterically hindered phenolic antioxidant present in a concentration of about 5 phr or less, and a phosphite antioxidant present in a concentration of about 5 phr or less.

The present invention belongs to the field of functional materials, and particularly relates to a directly printable image recording material, a preparation method and application thereof. The image recording material comprises 25 to 78.8 parts by mass of a photopolymerizable monomer, 0.2 to 5 parts by mass of a photoinitiator, 20 to 70 parts by mass of an inert component, and 0.05 to 2 parts by mass of a thermal polymerization inhibitor, and has an initial viscosity of 200 to 800 mPa.Math.s. The photopolymerizable monomer includes a thiol monomer and an olefin monomer, at least one of which is a silicon-based monomer with polyhedral oligomeric silsesquioxane as a silicon core. By introducing a POSS-based thiol or olefin monomer into the photopolymerizable monomer in combination with other material components, the recording material is allowed to have an initial viscosity of 200 to 800 mPa.Math.s, and meanwhile, the low thermal conductivity characteristic of the POSS-based photopolymerizable monomer is utilized, so that image storage quality is ensured, continuous industrial production of the image recording material is achieved, the process cost is reduced and the production efficiency is improved.

A composition includes: a near infrared absorbing compound A that includes a π-conjugated plane having a monocyclic or fused aromatic ring; and a solvent B, in which the solvent B includes a solvent B1 in which a solubility parameter is in a range between 19.9 MPa.sup.0.5 or higher and 22.3 MPa.sup.0.5 or lower and a solvent B2 in which a solubility parameter is lower than 19.9 MPa.sup.0.5 or higher than 22.3 MPa.sup.0.5, and a content of the solvent B2 in the solvent B is 9 mass % or lower.

The present disclosure relates in one aspect to methods of preparing non-homogeneous polymer materials wherein light is used to control structure and/or composition. In certain embodiments, the present disclosure provides methods for creating gradient index optical elements including holographic elements.

Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A.sub.450/A.sub.first, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:

(Abs.sub.first−Abs.sub.valley)/Abs.sub.first=VD wherein, Abs.sub.first is an absorption value at the first absorption peak wavelength and Abs.sub.valley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.

A resin including a highly sequenced copolymer is presented, and the preparation and application of its resist composition is presented. The resist has excellent performance and can promote the development of integrated circuits.

A quantum dot, and a quantum dot composite and a device including the same, wherein the quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well layer disposed on the seed and a shell disposed on the quantum well layer, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), and gallium (Ga), and wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.