A photosensitive resin composition comprising: (a) an epoxy resin, (b) a cationic polymerization initiator, (c) an anthracene derivative, and (d) an organic solvent having a carbonyl group, wherein the anthracene derivative (c) comprises at least one selected from the group consisting of compounds represented by a following formula (1) (In the formula (1), R.sup.1 and R.sup.2 each independently represents an alkyl group having 4 or more carbon atoms or an aryl group having 6 to 10 carbon atoms, R.sup.3 and R.sup.4 each independently represents an alkyl group, an alkoxy group having 4 or more carbon atoms, an amino group, an alkylamino group, an alkylsulfonyl group, or a halogen atom, and m and n each independently represents an integer of 0 to 4).

##STR00001##

The present disclosure relates to a dual-cure phase-separation type photosensitive resin composition for continuous 3D printing with high precision, including an acrylate having a cross-linkable double bond, a polyurethane prepolymer, a chain extender, and a photoinitiator. The polyurethane prepolymer is produced by a reaction between an isocyanate and a polyether polyol with a molecular weight larger than or equal to 4000 under heating and catalytic action. The photosensitive resin composition of the present disclosure is used in the continuous 3D printing to make high precision parts.

A resist composition comprising a sulfonium salt of a carboxylic acid having a nitro-substituted benzene ring is provided. The carboxylic acid is free of iodine and bromine, and when the benzene ring is fluorinated, the number of fluorine atoms is up to 3. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

The present invention is a compound represented by the following general formula (1). ##STR00001##

A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C.sub.1-C.sub.20 hydrocarbylene group and an anion derived from an iodized or brominated phenol offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A photoresist composition and a method of fabricating a semiconductor device, the composition including a photosensitive polymer having a protecting group; a photoacid generator (PAG); a metal precursor, the metal precursor being capable of generating metal ions and secondary electrons in response to irradiating light of a 13.5 nm wavelength thereto; and a solvent.

A first object of the present invention is to provide a composition having excellent coatability. In addition, a second object of the present invention is to provide a composition, a transfer film, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and an electronic device, which are related to the composition.

A composition of the present invention includes a compound A having one or more specific structures selected from the group consisting of (a), (b), and (c), and a resin. (a) a perfluoroalkenyl group, (b) a perfluoropolyether group, and (c) a group represented by General Formula (C1) or General Formula (C2),

*—Cm.sup.+Am.sup.−[-L.sup.m-(Rf).sub.m2].sub.m1  (C1)

*-An.sup.−Cn.sup.+[-L.sup.n-(Rf).sub.n2].sub.n1  (C2)

A resist composition comprising a base polymer and a quencher is provided. The quencher is a salt compound consisting of a cyclic ammonium cation and an anion derived from a fluorinated 1,3-diketone compound, fluorinated β-keto ester compound or fluorinated imide compound. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and a quencher is provided. The quencher is a salt compound obtained from a nitrogen-containing compound having an iodine-substituted aromatic ring bonded to the nitrogen atom via a C.sub.1-C.sub.20 hydrocarbon group which may contain an ester bond and/or an ether bond and a fluorinated 1,3-diketone compound, fluorinated β-keto ester compound or fluorinated imide compound. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

The present disclosure relates to novel multiple trigger monomer containing negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions utilize novel monomers and mixtures of novel monomers. The methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.