A thermally stable diamine compound of formula (I′) is proposed as well as polymers, copolymers, polyamic acids, polyamic acid esters, or polyimides based on such compound. Also, a process of preparing orientation layers for liquid crystals including preparing orientation layers for liquid crystals from thermally stable alignment materials comprising diamine compounds of formula (I′).

A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.

A polypeptide, a photoresist composition including the polypeptide, and a method of forming patterns by using the photoresist composition.

A resin composition which is configured such that if the resin composition is formed into a resin composition film that has a thickness of 3.0 μm after a heat treatment at a temperature within the range of 200-350° C., the resin composition film forms a heat-resistant resin film that has a light transmittance of 50% or more at a wavelength of 365-436 nm before the heat treatment, while having a light transmittance of 10% or less at a wavelength of 365-436 nm after the heat treatment. Provided is a resin composition having a function of absorbing ultraviolet light and visible light in a short wavelength range, which is suitable for the formation of a planarization film, an insulating layer and a partition wall that are used for organic light emitting devices or display devices.

The present invention provides a tetracarboxylic acid diester compound shown by the following general formula (1),

##STR00001##

wherein X.sub.1 represents a tetravalent organic group; and R.sub.1 represents a group shown by the following general formula (2),

##STR00002##

wherein the dotted line represents a bond; Y.sub.1 represents an organic group with a valency of k+1; “k” represents 1 or 2; and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound that can give a polyimide precursor polymer soluble in a safe organic solvent widely used as a solvent of a composition and usable as a base resin of a photosensitive resin composition.

A high-temperature-stable spin-on-carbon (“SOC”) material that fills topography features on a substrate while planarizing the surface in a one-step, thin layer coating process is provided. The material comprises low molecular weight polyimides or diimides that are pre-imidized in solution rather than on the wafer. The SOC layers can survive harsh CVD conditions and are also SC1 resistant, especially on TiN and SiOx surfaces.

A fluoropolymer-photoresist composition containing fluorinated polymer for containment of liquid inks in the printing of electronic devices. Methods of applying and treating the fluoropolymer-photoresist composition containing fluorinated polymer to provide low surface energy before and after processing and development of the photoresist.

A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (ii) a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (iii) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.

The present invention provides a resin composition having a high sensitivity and serving to produce a cured film with a low water absorption rate. The resin composition includes: (a) an alkali-soluble resin and (b1) an amido-phenol compound containing a phenolic hydroxyl group in which a monovalent group as represented by the undermentioned general formula (1) is located at the ortho position and/or (b2) an aromatic amido acid compound containing a carboxy group in which a monovalent group as represented by the undermentioned general formula (2) is located at the ortho position: ##STR00001##
wherein in general formula (1), X is a monovalent organic group having an alkyl group that contains 2 to 20 carbon atoms and bonds directly to the carbonyl carbon in general formula (1) or a monovalent organic group that has —(YO).sub.n—; and in general formula (2), U is a monovalent organic group that has an alkyl group containing 2 to 20 carbon atoms and bonding directly to the amide nitrogen in general formula (2) or a monovalent organic group that has —(YO).sub.n—; wherein Y is an alkylene group containing 1 to 10 carbon atoms and n is an integer of 1 to 20.

A polymer and a resin composition thereof are provided. The polymer includes a first repeat unit represented by Formula (I) and a second repeat unit represented by Formula (II)

##STR00001##

wherein A.sup.1 is C.sub.24-48 alkylene, C.sub.24-48 alkenylene, C.sub.24-48 alkynylene, C.sub.24-48 alicyclic alkylene, C.sub.24-48 alicyclic alkenylene, or C.sub.24-48 alicyclic alkynylene. A.sup.2 and A.sup.4, independently having at least one reactive group, are independently C.sub.6-25 arylene, C.sub.4-8 cycloalkylene, C.sub.5-25 heteroarylene, divalent C.sub.7-25 alkylaryl, divalent C.sub.7-25 acylaryl, divalent C.sub.6-25 aryl ether, divalent C.sub.7-25 acyloxyaryl, or divalent C.sub.6-25 sulfonylaryl; and, A.sup.3 is substituted or unsubstituted C.sub.6-25 arylene, C.sub.4-8 cycloalkylene, C.sub.5-25 heteroarylene, divalent C.sub.7-25 alkylaryl, divalent C.sub.7-25 acylaryl, divalent C.sub.6-25 aryl ether, divalent C.sub.7-25 acyloxyaryl, or divalent C.sub.6-25 sulfonylaryl.