A method of manufacturing a semiconductor device includes forming a first resist layer over a substrate, and forming a second resist layer over the first resist layer. The second resist layer is patterned to expose a portion of the first resist layer to form a second resist layer pattern. The first resist layer is exposed to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern. Portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer are removed.

The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

Disclosed are a salt represented by formula (I), an acid generator, and a resist composition comprising the same:

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wherein R.sup.1 and R.sup.2 each represent a hydroxy group, *—O—R.sup.10, *—O-L.sup.10-CO—O—R.sup.10; L.sup.10 represents an alkanediyl group; R.sup.10 represents an acid-labile group; R.sup.4, R.sup.5, R.sup.7 and R.sup.8 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A.sup.1 and A.sup.2 each represent a hydrocarbon group, the hydrocarbon group may have a substituent, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO.sub.2—; m1 represents an integer of 1 to 5, m2 and m8 represent an integer of 0 to 5, m4, m5 and m7 represent an integer of 0 to 4, 1≤m1+m7≤5, 0≤m2+m8≤5; and AI.sup.− represents an organic anion.

The radiation-sensitive resin composition contains: a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a structural unit represented by the following formula (1); and a radiation-sensitive acid generating agent. L represents a single bond, —COO—, —O—, or —CONH—. X represents a single bond, —O—, -G-O—, —CH.sub.2—, —S—, —SO.sub.2—, —NR.sup.A—, or —CONH—, wherein G represents a divalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, and R.sup.A represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. R.sup.2 and R.sup.3 each independently represent a halogen atom, a hydroxy group, a sulfanyl group, or an organic group having 1 to 20 carbon atoms.

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The present invention relates to a photoresist composition capable of realizing excellent pattern performance during formation of fine patterns, and of preparing a photoresist film that is excellent in chemical stability of a plating solution, and a photoresist film using the same.

The disclosed subject matter relates to resist compositions comprising a phenolic resin component, a photoactive 2,1,5-diazonaphthoquinonesulfonate component (PAC), a solvent component that do not include or require the use of an added photo acid generator (PAG). The PAC is a free PAC, a coupled PAC (PACb) or a combination thereof that includes a substituted or unsubstituted 2,1,5-DNQ material or compound onto which a substituted or unsubstituted 2,1,5-DNQ material is appended that, when UV exposed, do not form sulfonic acid. The phenolic resin component is a Novolak derivative in which some or all of the free hydroxy groups are protected with an acid cleavable acetal moiety which can include a PACb moiety. The disclosed subject matter also relates to the methods of using the present compositions in either in thick for thin film photoresist device manufacturing methodologies.

A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.

The present invention provides a positive photoresist composition having excellent storage stability, sensitivity, developing properties, plating resistance, and heat resistance. More specifically, a specific dissolution inhibitor in the form of an oligomer having the same repeating unit structure as the resin contained in the photoresist composition is applied to said composition.

A resist composition containing a base material component and a compound represented by General Formula (d0), in which in the formula, Rd.sup.0 represents a condensed cyclic group containing a condensed ring containing at least one aromatic rings, the condensed cyclic group having, as a substituent, an acid decomposable group which is decomposed under action of acid to form a polar group, Yd.sup.0 represents a divalent linking group or a single bond, M.sup.m+ represents an m-valent organic cation, and m represents an integer of 1 or more

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A resist composition comprising a base polymer and an acid generator in the form of a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with a fluorinated cyclic group and a nitro group is provided. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.