A positive resist composition is provided comprising a base polymer comprising repeat units having a carboxy group whose hydrogen is substituted by a nitrobenzene ring-containing tertiary hydrocarbyl group. The resist composition has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and size variation after exposure.

A photoresist includes a polymer and a photoactive compound. The photoactive compound contains a sensitizer component. The photoactive compound contains an acid generator or a base molecular. The acid generator or the base molecular bonds the sensitizer component. The photoactive compound is within a polymer backbone. The sensitizer component is configured to absorb an EUV light to produce electrons.

Monomers and polymers are provided that comprise a carbon alicyclic group or heteroalicyclic group that comprises 1) one or more acid-labile ring substituents and 2) one or more ether or thioether ring substituents. Photoresists that comprise such polymers also are provided.

Provided is a compound having one or more halogens and an unsaturated double bond. Provided is a method for producing an iodine-containing vinyl monomer comprising: a) a step of providing an iodine-containing alcohol substrate having a general structure represented by the formula (1-1):

##STR00001##

(the definitions of the variables in the formula (1-1) are as described in the specification); and b) a step of dehydrating the iodine-containing alcohol substrate to obtain the iodine-containing vinyl monomer having a general structure represented by the formula (1):

##STR00002##

(the definitions of the variables in the formula (1) are as described in the specification).

The present invention provides a pattern forming method with which a pattern having excellent LER performance is obtained. In addition, the present invention provides an actinic ray-sensitive or radiation-sensitive composition and a method for manufacturing an electronic device, which relate to the pattern forming method. The pattern forming method of the present invention includes, in the following order, an exposure step of exposing a resist film, the resist film including an acid-decomposable group a which reacts to generate a polar group having a pKa of 6.0 or more, an acid-decomposable group b which reacts to generate a polar group having a pKa of less than 6.0, and a photoacid-generating component, a first heating step for reacting at least a part of the acid-decomposable group a with an acid to generate the polar group having a pKa of 6.0 or more, a second heating step for reacting at least a part of the acid-decomposable group b to generate the polar group having a pKa of less than 6.0, and a development step.

Disclosed are a salt represented by formula (I), an acid generator, and a resist composition including the same:

##STR00001## wherein R.sup.1, R.sup.2 and R.sup.3 each represent a hydroxy group, *—O—R.sup.10, *—O—CO—O—R.sup.10, etc.; L.sup.10 represents an alkanediyl group; R.sup.10 represents an acid-labile group; R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8 and R.sup.9 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A.sup.1, A.sup.2 and A.sup.3 each represent a hydrocarbon group which may have a substituent, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO.sub.2—; m1 represents an integer of 1 to 5, m2, m3, m8 and m9 represent an integer of 0 to 5, m4 to m7 represent an integer of 0 to 4, 1≤m1+m7≤5, 0≤m2+m8≤5, 0≤m3+m9≤5; and AI.sup.− represents an organic anion.

A resist composition comprising a sulfonium salt of a carboxylic acid having a nitro-substituted benzene ring is provided. The carboxylic acid is free of iodine and bromine, and when the benzene ring is fluorinated, the number of fluorine atoms is up to 3. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.

Disclosed herein is a photosensitive composition comprising a DNQ-PAC, a heterocyclic thiol compound or tautomeric form thereof, an acrylate polymer, a Novolak and a PAG and its method of use on a substrate which may include a chalcophile substrate.

A method for manufacturing an indium-containing organic polymer film includes forming an organic polymer film on a base body, infiltrating the organic polymer film with an alkylindium having an alkyl group having 2 to 4 carbon atoms, and oxidizing the organic polymer film infiltrated with the alkylindium.