A photosensitive resin composition for forming an interlayer insulating film, which contains an alkali-soluble resin (A), a photosensitizer (B), a thermal acid generator (T) which generates an acid when heated, and a silane coupling agent (C), and wherein the alkali-soluble resin (A) has a constituent unit (A1) represented by general formula (a-1) or an alicyclic epoxy group-containing unit (A3). In general formula (a-1), R represents a hydrogen atom or a methyl group; and Ra.sup.01 represents a hydrogen atom or an organic group having a hydroxyl group.

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An improved photoimageable dry film formulation, a fluidic ejection head containing a thick film layer derived from the improved photoimageable dry film formulation, and a method for making a fluidic ejection head. The improved photoimageable dry film formulation includes a multifunctional epoxy compound, a photoinitiator capable of generating a cation, a non-photoreactive solvent, and from about 0.5 to about 5% by weight a silane oligomer adhesion enhancer based on a total weight of the photoimageable dry film formulation before drying.

Disclosed and claimed herein are photoimageable dielectric compositions for dielectric passivation layers, dielectric protection layers as well as dielectric redistribution layers for use in the manufacture of semiconductors, semiconductor packages and circuit board constructions. More specifically it relates to photoimageable polymers containing vinyl groups capable of being crosslinked during processing and post cured at lower temperatures and shorter times than conventional dielectric materials. The processed compositions are characterized by low dielectric constants and low dissipation factors as well as low moisture uptake, chemical and thermal stability, flexibility and excellent HAST (Highly Accelerated Stress Test) and TCT (Thermal Cycling Test) results. The invention also relates to low dk/df dielectric compositions that are not photoimageable

A photosensitive resin composition comprising (A) a silicone resin containing an epoxy and/or phenolic hydroxyl group, (B) a photoacid generator, and (C) a cure promoter selected from diazabicycloundecene, diazabicyclononene, an organic salt of diazabicycloundecene derivative, and an organic salt of diazabicyclononene derivative is shelf stable. A photosensitive resin coating obtained therefrom may be processed to form a fine size pattern. The resin coating has improved film properties including chemical resistance, adhesion to substrates, mechanical properties, electric insulation, and copper migration resistance, and is thus fully reliable as an insulating protective film.

The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1):
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)  Formula (1)
[where R.sup.1 is an organic group of Formula (2): ##STR00001##
and is bonded to a silicon atom through a Si—C bond; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.

A resin and a photosensitive resin composition whereby a cured film exhibiting high extensibility, reduced stress, and high adhesion to metals can be obtained are provided. A resin (A) including a polyamide structure and at least any structure of an imide precursor structure and an imide structure, wherein at least any of the structures of the resin (A) include a diamine residue having an aliphatic group.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: ##STR00001##
wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b. The semiconductor resist composition may have excellent solubility and storage stability.

The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3):

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where R.sup.1 represents an iodine-containing organic group; and R.sup.2 and R.sup.3 are each independently identical to R.sup.1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

The present invention relates to a novel di-amine compound, a heat-resistant resin using the di-amine compound, and a resin composition using the heat-resistant resin, and a cured film excellent in chemical resistance and film properties even by a thermal treatment at a low temperature of 200° C. or less can be obtained. The novel di-amine compound is represented by the general formula (1). The heat-resistant resin composition of the present invention or the resin composition can be suitably used in a surface protective film and an interlayer dielectric film of a semiconductor device, a dielectric layer or a planarizing layer of an organic electroluminescent element (organic EL), or the like. ##STR00001##
(In the general formula (1), R.sup.1 and R.sup.2 each are a divalent aliphatic group, R.sup.3 and R.sup.4 each are a divalent aliphatic group, aliphatic ring group, aromatic group, a divalent organic group bonded to an aromatic group by —O—, —CO—, —SO.sub.2—, —CH.sub.2—, —C(CH.sub.3).sub.2— or —C(CF.sub.3).sub.2— (wherein F is fluorine), a divalent organic group in which two or more aromatic groups are bonded by a single bond, or a divalent organic group in which two or more aromatic groups are bonded by —O—, —CO—, —SO.sub.2—, —CH.sub.2—, —C(CH.sub.3).sub.2— or —C(CF.sub.3).sub.2— (wherein F is fluorine), R.sup.5 and R.sup.6 each are an organic group having any of a hydrogen atom, a halogen atom, a hydroxyl group, a nitro group, a cyano group, an aliphatic group, an aromatic group, an acetyl group, a carboxyl group, an ester group, an amide group, an imide group, and a urea group, A is a divalent aliphatic group, aliphatic ring group, aromatic group, a divalent organic group in which two or more aromatic groups are bonded by a single bond, or a divalent organic group in which two or more aromatic groups are bonded by —O—, —S—, —CO—, —SO.sub.2—, —CH.sub.2—, —C(CH.sub.3).sub.2— or —C(CF.sub.3).sub.2— (wherein F is fluorine), p and q each are an integer number in the range of 0 to 3).

A fluid ejection head for a fluid jet ejection device and a method for improving adhesion between a nozzle plate and a flow feature layer of the ejection head. The fluid ejection head includes a silicon substrate containing at least one array of fluid ejectors deposited thereon. At least one fluid supply via is etched through the silicon substrate adjacent to the at array of fluid ejectors. A flow feature layer is attached to the silicon substrate. The flow feature layer contains at fluid chambers and fluid flow channels corresponding the array of fluid ejectors for ejecting fluid provide fluid from the at least one fluid supply via to fluid chambers. At least a portion of the flow feature layer comprises an attachment surface having improved surface adhesion characteristics, and a nozzle plate containing nozzle holes is laminated to the flow feature layer to provide the fluid ejection head.