In the case of an embossing lacquer based on a UV-polymerizable prepolymer composition containing at least one acrylate monomer, the prepolymer compositionin addition to the acrylate monomercontains at least one thiol selected from the group: 3-Mercaptopropianates, mercaptoacetates, thioglycolates, and alkylthiols as well as potentially a surface-active anti-adhesive additive selected from the group of anionic surfactants, such as polyether siloxanes, fatty alcohol ethoxylates, such as polyoxyethylene (9) lauryl ethers, monofunctional alkyl (meth)acrylates, polysiloxane (meth)acrylates, perfluoroalkyl (meth)acrylates, and perfluoropolyether (meth)acrylates as well as a photoinitiator, as well as a method for imprinting substrate surfaces coated with an embossing lacquer.

A method of manufacturing a wire grid pattern includes providing a laminate having a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by irradiation of first light; and irradiating the laminate with second light. The adhesive layer may comprise a silane coupling agent.

A resin composition including the following components (a) and (b). (a) A polyimide precursor having a structural unit represented by the following general formula (1); and (b) a compound represented by the following general formula (2): wherein in the formula R.sup.1 is a tetravalent organic group, R.sup.2 is a divalent organic group and R.sup.3 and R.sup.4 are independently a hydrogen atom, an alkyl group, a cycloalkyl group or a monovalent organic group having a carbon-carbon unsaturated double bond. R.sup.5 is an alkyl group having 1 to 4 carbon atoms, R.sup.6 is independently a hydroxyl group or an alkyl group having 1 to 4 carbon atoms, a is an integer of 0 to 3, n is an integer of 1 to 6, and R.sup.7 is a group represented by the following general formula (3) or (4): wherein in the formula (3) or (4), R.sup.8 is an alkyl group having 1 to 10 carbon atoms or a monovalent organic group derived from hydroxyalkylsilane and R.sup.9 is an alkyl group having 1 to 10 carbon atoms, a monovalent organic group derived from aminoalkylsilane or a heterocyclic group, and R.sup.8 and R.sup.9 may independently have a substituent. ##STR00001##

A photosensitive resin composition comprising (A) an acid crosslinkable group-containing silicone resin, (B) a photoacid generator, and (C) hollow silica is provided. The photosensitive resin composition has satisfactory reliability, flexibility, lithographic resolution and light resistance while maintaining the function of an antireflection film.

The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3):

##STR00001##

where R.sup.1 represents an iodine-containing organic group; and R.sup.2 and R.sup.3 are each independently identical to R.sup.1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

An adhesion promoter composition comprising at least one of the following compounds:

(a) a cyclic compound having the formula:

##STR00001##

(b) a non-cyclic compound having the formula:

##STR00002##

wherein R.sub.1 and R.sub.2 each independently represents a non-photoactive phenyl, a photoactive phenyl or a C.sub.1-C.sub.4 alkyl; R.sub.3 represents a non-photoactive phenyl; R.sub.4 represents a photoactive phenyl; W represents Si or Ge; n represents an integer of value greater than 1;
m represents an integer between 0 and 1.

A photosensitive resin composition comprising (A) a silicone resin containing an epoxy and/or phenolic hydroxyl group, (B) a photoacid generator, and (C) a cure promoter selected from diazabicycloundecene, diazabicyclononene, an organic salt of diazabicycloundecene derivative, and an organic salt of diazabicyclononene derivative is shelf stable. A photosensitive resin coating obtained therefrom may be processed to form a fine size pattern. The resin coating has improved film properties including chemical resistance, adhesion to substrates, mechanical properties, electric insulation, and copper migration resistance, and is thus fully reliable as an insulating protective film.

This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:

##STR00001##

wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from OR.sup.a and OC(O)R.sup.b.

A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.