A photoresist composition includes a photoresist polymer including a repeating unit to which a silicon-containing leaving group is combined, a photo-fluorine generator including a sulfonium fluoride, and a solvent.

A resin and a photosensitive resin composition whereby a cured film exhibiting high extensibility, reduced stress, and high adhesion to metals can be obtained are provided. A resin (A) including a polyamide structure and at least any structure of an imide precursor structure and an imide structure, wherein at least any of the structures of the resin (A) include a diamine residue having an aliphatic group.

The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1):
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4(a+b)Formula (1)
[where R.sup.1 is an organic group of Formula (2): ##STR00001##
and is bonded to a silicon atom through a SiC bond; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.

Compositions are for formation of etch-resistant resins. Such resins are useful for manufacturing components or devices.

Provided is a cured film having high chemical resistance, high elongation, and high adhesion to metal copper. A cured film formed by curing a photosensitive resin composition containing a polybenzoxazole precursor, in which a rate at which the polybenzoxazole precursor is cyclized into polybenzoxazole is not less than 10% and not more than 60%.

Provided is a photosensitive resin composition comprising: (A) a silicone resin having an epoxy group and/or a phenolic hydroxyl group; (B) a photoacid generator represented by formula (B); and (C) a benzotriazole compound.

##STR00001##

A method of manufacturing a wire grid pattern includes providing a laminate having a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by irradiation of first light; and irradiating the laminate with second light. The adhesive layer may comprise a silane coupling agent.

The invention relates to the field of materials technology and provides a modified nano-silica and a method for preparing the same, a pigment dispersion and a photosensitive resin composition, so as to solve the problem that conventional nano-silica cannot crosslink with other polymeric materials, and pigment dispersions are apt to aggregate and have a poor film-forming property. The modified nano-silica according to the invention has unsaturated double bonds on the surface thereof and can crosslink with other polymeric materials, such that the pigment dispersion comprising the modified nano-silica can effectively prevent agglomeration and has a good film-forming property, and the photosensitive resin composition comprising the pigment dispersion can reduce the thermal expansion of a film made thereby, as well as the occurrence of shrinkage and collapse phenomena in the surface of the film, and enhance the heat-resistance, chemical-resistance, mechanical properties and abrasion-resistance of the film.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

The composition includes two or more near infrared absorbing compounds having an absorption maximum in a wavelength range of 650 to 1000 nm and having a solubility of 0.1 mass % or lower in water at 23? C., in which the two or more near infrared absorbing compounds include a first near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm, and a second near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm which is shorter than the absorption maximum of the first near infrared absorbing compound, and a difference between the absorption maximum of the first near infrared absorbing compound and the absorption maximum of the second near infrared absorbing compound is 1 to 150 nm.