Patent classifications
G03F7/0751
Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography
An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.
PHOTOSENSITIVE COMPOSITIONS, COLOR FILTER AND MICROLENS DERIVED THEREFROM
Embodiments in accordance with the present invention encompass self-imagable polymer compositions containing a colorant which are useful for forming films that can be patterned to create structures for color filters and microlens having applications in a variety of microelectronic devices, optoelectronic devices and displays, such as for example image sensors. The compositions of this invention can be tailored to form positive tone images for forming an array of images, which can be thermally transformed into an array of microlens. The images thus formed can then be used in color filter applications.
Photosensitive resin composition for forming interlayer insulating film, interlayer insulating film, and method for forming interlayer insulating film
A photosensitive resin composition for forming an interlayer insulating film, which contains an alkali-soluble resin (A), a photosensitizer (B), a thermal acid generator (T) which generates an acid when heated, and a silane coupling agent (C), and wherein the alkali-soluble resin (A) has a constituent unit (A1) represented by general formula (a-1) or an alicyclic epoxy group-containing unit (A3). In general formula (a-1), R represents a hydrogen atom or a methyl group; and Ra.sup.01 represents a hydrogen atom or an organic group having a hydroxyl group. ##STR00001##
METHOD TO IMPROVE ADHESION OF PHOTORESIST ON SILICON SUBSTRATE FOR EXTREME ULTRAVIOLET AND ELECTRON BEAM LITHOGRAPHY
An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.
METHOD TO IMPROVE ADHESION OF PHOTORESIST ON SILICON SUBSTRATE FOR EXTREME ULTRAVIOLET AND ELECTRON BEAM LITHOGRAPHY
An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.
Silane coupling agent and method of manufacturing wire grid pattern using the same
A method of manufacturing a wire grid pattern includes providing a laminate having a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by irradiation of first light; and irradiating the laminate with second light. The adhesive layer may comprise a silane coupling agent.
PHOTOSENSITIVE COMPOSITION
A photosensitive composition is provided. The photosensitive composition includes a composition for forming polyimide, a photoinitiator, a photo cross-linking agent, and a thermal cross-linking agent. The composition for forming polyimide includes a diamine monomer component, an anhydride monomer component, and a polyimide modifier. The diamine monomer component includes a long-chain aliphatic diamine monomer, a carboxylic acid-containing diamine monomer, and a triazole compound. The anhydride monomer component includes a dianhydride monomer and a monoanhydride monomer. The polyimide modifier has a double bond and an epoxy group.
Photosensitive resin composition, resist laminate, and articles obtained by curing same (5)
The purpose of the present invention is to provide the following: a photosensitive epoxy resin composition that, via photolithography, can form a high-resolution, low-stress image that has vertical side walls and resists moisture and heat, and/or a resist laminate using said photosensitive epoxy resin composition; and an article or articles obtained by curing said photosensitive epoxy resin composition and/or resist laminate. The present invention is a photosensitive resin composition containing the following: an epoxy resin (A), a polyol compound (B) having a specific structure, a cationic-polymerization photoinitiator (C), a silane compound (D) containing an epoxy group, and a reactive epoxy monomer (E) having a specific structure. The epoxy resin (A) contains the phenol derivative represented by formula (1), an epoxy resin (a) obtained via a reaction with epihalohydrin, and an epoxy resin (b) that can be represented by formula (2). ##STR00001##
Lithographic printing plate precursors and coating
A coating for use with a hydrophilic sheet substrate to form a lithographic printing plate precursor, including at least one Compound A silane compound and at least one Compound B phosphinic acid or organic derivative thereof. Compounds A and B experience a synergistic interaction which substantially increases adhesion to the substrate of areas imaged by radiation. The resulting plate is exhibits high on-press durability suitable for high volume commercial uses without a preheat step prior to development, even when imaged with lower levels of radiation such as violet lasers. A method of preparing a lithographic printing plate includes imagewise exposing the coating on a surface of a hydrophilic substrate to violet radiation and developing in an alkaline aqueous solution without preheating.
STRUCTURES INCLUDING A SiOCN PHOTORESIST ADHESION LAYER AND METAL-OXIDE RESIST AND METHODS OF FORMING SAME
Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.